This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2110 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Part numbers include: A5G21H605W19N.
Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
| Frequency | Gps (dB) | ηD (%) | Output PAR (dB) | ACPR (dBc) |
| 2110 MHz | 16.3 | 56.1 | 8.9 | –26.3 |
| 2140 MHz | 16.5 | 57.6 | 8.6 | –27.3 |
| 2170 MHz | 16.2 | 57.1 | 8.2 | –28.9 |
4 design files
