This A5G18H610W19N 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1805 to 1880 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Part numbers include: A5G18H610W19N.
Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = -5.4 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
| Frequency | Gps (dB) | ηD (%) | Output PAR (dB) | ACPR (dBc) |
| 1805 MHz | 17.3 | 55.8 | 8.4 | –32.3 |
| 1840 MHz | 17.5 | 55.6 | 8.6 | –34.7 |
| 1880 MHz | 17.4 | 54.1 | 8.5 | –33.7 |
4 design files
