Broadcast Solutions
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Higher RF Performance and Power Densities


The broadcast industry is rapidly moving to digital modulation from the analog modulation schemes it has employed for more than 70 years. After February 2009, digital broadcasting in the United States will replace all analog modulation schemes, and nearly all broadcasters throughout the world will soon be "fully digital". This conversion places significant demands on the transmitter's power amplifier as well as the RF power transistors because the signals have very high peak-to-average ratios. As a result, RF power transistors designed for this application must exhibit extremely high linearity under a wide range of operating conditions, as well as high efficiency and ruggedness to ensure long operating life.

Freescale has a comprehensive portfolio of broadcast devices to support the needs of FM, VHF and UHF transmitter equipment. Freescale's technical expertise delivers RF high power transistors for broadcast communication systems that combine performance, linearity, efficiency and ruggedness to meet your needs.

Freescale Competitive Advantages

  • Highest gain figures in the industry — up to 26 dB
  • Highest efficiency in the industry — 71% at P1dB
  • Low thermal resistance values reduce system cooling costs
  • Wide frequency range enables use in numerous applications
  • Cost-effective, over-molded plastic packaging options
  • Low thermal resistance air cavity packaging options
  • Backed by Freescale's secure volume manufacturing capability
  • Proven reliability, quality and consistency
  • Integrated ESD protection
  • World-class, global applications and design support
  • RoHS compliant
  • Proven high voltage LDMOS process

Product Performance

 Link  HF/VHF/UHF - 50 Volt            Link  UHF - 32 Volt

RF Power HF/VHF/UHF Broadcast — Featured Products

MRF6VP3450H/HS
450 W Pulsed, NI-1230/S
Analog and Digital UHF TV

Designed primarily for wideband applications with frequencies up to 860 MHz

  • Typical DVB-T OFDM performance at 860 MHz: VDD = 50 Volts, IDQ = 1400 mA, Pout = 90 watts
    • Power Gain = 22.5 dB
    • Drain Efficiency = 28%
    • ACPR @ 4 MHz Offset = –62 dBc @ 4 kHz Bandwidth
  • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts Avg. (DVB-T OFDM Signal, 10 dB PAR, 7.61 MHz Channel Bandwidth)
MRF6VP2600H
600 W CW, NI-1230
Analog and Digital FM
VHF TV

Designed primarily for wideband applications with frequencies up to 250 MHz

  • Typical DVB-T OFDM performance at 225 MHz: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 watts
    • Power Gain = 25 dB
    • Drain Efficiency = 28.5%
    • ACPR @ 4 MHz Offset = –61 dBc @ 4 kHz Bandwidth
    • ΘJC = 0.20°C/W
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 watts peak power, pulse width = 100 µsec, duty cycle = 20%
MRF6VP21KH
1 kW Pulsed, NI-1230
Digital VHF TV

Designed primarily for pulsed wideband applications with frequencies up to 235 MHz

  • Typical pulsed performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 watts peak, pulse width = 100 µsec, duty cycle = 20%
    • Power Gain = 24 dB
    • Drain Efficiency = 67.5%
    • ΘJC = 0.03°C/W
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 watts peak power, pulse width = 100 µsec, duty cycle = 20%
MRF6V2300N
300 W CW, TO-270 WB
Analog and Digital FM
VHF TV

Designed primarily for wideband applications with frequencies up to 250 MHz

  • Typical CW performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 watts
    • Power Gain = 25.5 dB
    • Drain Efficiency = 68%
    • ΘJC = 0.24°C/W
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 watts CW output power
HF/VHF/UHF Broadcast – 50 Volt Devices
Part Number Voltage
(V)		 Operating
Frequency
(MHz)		 Rated
Power
(W)		 Technology Package ΘJC
°C/W		 Typical
Gain
(dB)		 Typical
Efficiency
(%)		 Demo Board Options
MRF6V2010N/B 50 10-450 10 CW Very High Voltage  LDMOS
(VHV6)		 Single-ended Plastic 3(2) 23.9 62 27, 130, 220, 450 MHz
MRF6V2150N/B 50 10-450 150 CW Very High Voltage  LDMOS
(VHV6)		 Single-ended Plastic 0.24(2) 25 68.3 27, 130, 220, 450 MHz
MRF6V2300N/B 50 10-450 300 CW Very High Voltage  LDMOS
(VHV6)		 Single-ended Plastic 0.24(2) 25.5 68 27, 88-108, 130, 175-225, 220, 450 MHz
MRF6VP3450H/HS 50 470-860 450(1) Very High Voltage  LDMOS
(VHV6)		 Push-Pull
Air Cavity		 0.27(3) 22.5/90 W
(OFDM)		 28/90 W
(OFDM)		 470-860 MHz
MRF6VP2600H 50 10-250 600 CW Very High Voltage  LDMOS
(VHV6)		 Push-Pull
Air Cavity		 0.20(4) 25 28.5 225 MHz
MRF6VP11KH 50 10-150 1000(1) Very High Voltage  LDMOS
(VHV6)		 Push-Pull
Air Cavity		 0.03(5) 26 71 130 MHz
MRF6VP21KH 50 10-235 1000(1) Very High Voltage  LDMOS
(VHV6)		 Push-Pull
Air Cavity		 0.03(6) 24 67.5 225 MHz

UHF Broadcast — 32 Volt Devices		  [Top]
Part Number Voltage
(V)		 Operating
Frequency
(MHz)		 Rated
Power
(W)		 Technology Package ΘJC
°C/W		 Typical
Gain
(dB)		 Typical
Efficiency
(%)		 Demo Board Options
MRFE6P3300H 32 470-860 300 CW HV6E LDMOS Push-Pull
Air Cavity		 0.23 20.4 44.8 470-860, 820-900 MHz
MRF377H 32 470-860 240 CW HV6 LDMOS Push-Pull
Air Cavity		 0.27 18.2 23 860, 470-860 MHz
MRF373AL 32 470-860 75 CW HV4 LDMOS Flanged
Air Cavity		 0.89 18.2 60 860 MHz
MRFE6S9060N 28 470-960 60 CW HV6E LDMOS Single-ended Plastic 0.77 21.1 33 865-895, 920-960 MHz
(1) Peak Power 
(2) Thermal resistance is determined under specified RF operating conditions: 220 MHz @ CW rated power
(3) Thermal resistance is determined under RF operating conditions: 860 MHz @ 90 W Avg., DVB-T; simulated results
(4) Thermal resistance is determined under specified RF operating conditions: 225 MHz @ 600 W CW
(5) Thermal resistance is determined under specified RF operating conditions: 130 MHz @ 1000 W peak, 100 µsec pulse width, 20% duty cycle
(6) Thermal resistance is determined under specified RF operating conditions: 225 MHz @ 1000 W peak, 100 µsec pulse width, 20% duty cycle

Analog and Digital UHF TV — Output Transistor

This industry standard line-up provides 250 W Avg. output power with two stages and five devices.





Standard Solution – 250 Watt Avg. Line-up



  • 250 W Avg. Pout
  • 29 dB of gain in 2 stages



Devices Standard Driver 4xStandard Final Totals
Typical Gain 15 dB 15 dB 29 dB
Pout 10 W 70 W 250 W Avg.
Drain Efficiency 10% 30% 24%
5 total parts, DVB-T OFDM signal, 10 PAR dB, 0.5 dB splitting and combining loss

The MRF6VP3450H's high level of gain (22.5 dB) and high output power capability (90 W Avg. DVB-T OFDM) allows for very compact line-ups, providing 320 W Avg. output power with only two stages and five devices. This class-leading RF performance is 8 dB higher in gain and 30% higher in output power capability than the current standard solution.

Freescale MRF6VP3450H – 320 Watt Avg. Line-up


  • 42 dB gain vs. 29 dB gain
  • 320 W Avg. Pout vs. 250 W Avg. Pout
  • 30% more power out of the same part count
  • 8 dB higher gain on the output device
  • 6 dB higher gain on the driver

Devices MRFE6S9060N 4xMRF6VP3450H Totals
Typical Gain 21 dB 22.5 dB 42 dB
Pout 2.8 W 90 W 320 W Avg.
Drain Efficiency 10% 28% 24%
5 total parts, DVB-T OFDM signal, 10 PAR dB, 0.5 dB splitting and combining loss


Analog and Digital FM VHF TV — 600 Watt Output Transistor

The MRF6VP2600H power transistor is ideal for FM/VHF broadcast applications. The high level of output power (600 W CW) and high gain (25 dB) allows for very compact line-ups, providing 50 dB of gain in two stages. The exceptional efficiency, combined with low thermal resistance, considerably reduces thermal constraints.


1.1 kW Line-up 50 dB of Gain in 2 Stages






  • Smaller, lower cost driver
  • More compact design
  • Decreased part count
  • Better thermal — smaller heatsinks
  • 2:1 combining losses (0.2 dB)



Cross Reference   (7/2008)


FM/VHF/UHF Broadcast
Part Number Supplier Operating
Frequency
(MHz)		 Voltage
(V)		 Rated
Power
(W)		 Technology Package ΘJC
°C/W		 Typical
Gain
(dB)		 Typical
Efficiency
(%)
MRF6VP3450H/HS Freescale 470-860 50 450(1) Very High Voltage  LDMOS
(VHV6)		 Push-Pull
Air Cavity		 0.27(3) 22.5/90 W
(OFDM)		 28/90 W
(OFDM)
MRF6VP2600H Freescale 10-250 50 600 CW Very High Voltage  LDMOS
(VHV6)		 Push-Pull
Air Cavity		 0.20(4) 25 28.5
(OFDM)
MRF6VP21KH Freescale 10-235 50 1000(1) Very High Voltage  LDMOS
(VHV6)		 Push-Pull
Air Cavity		 0.03(6) 24 67.5
ARF475FL Microsemi 128 150 900 Ultra-high Voltage MOSFET Push-Pull
Air Cavity		 0.31 16 55
SD2943 ST Micro 30 50 350 N-Channel MOSFET Push-Pull
Air Cavity		 0.27 25 65
MRF6V2300N Freescale 220 50 300 CW Very High Voltage  LDMOS
(VHV6)		 Single-ended Plastic 0.24(2) 25.5 68
MRF151G M/A-COM 175 50 300 N-Channel MOSFET Push-Pull
Air Cavity		 0.35 16 55
ARF473 Microsemi 150 165 300 N-Channel MOSFET Push-Pull
Air Cavity		 <0.35 14 55
SD2932 ST Micro 175 50 300 N-Channel MOSFET Push-Pull
Air Cavity		 0.035 16 60
BLF368 NXP 225 32 300 VDMOS Push-Pull
Air Cavity		 0.035 13.5 62
(1) Peak Power 
(2) Thermal resistance is determined under specified RF operating conditions: 220 MHz @ CW rated power
(3) Thermal resistance is determined under RF operating conditions: 860 MHz @ 90 W Avg., DVB-T; simulated results
(4) Thermal resistance is determined under specified RF operating conditions: 225 MHz @ 600 W CW
(6) Thermal resistance is determined under specified RF operating conditions: 225 MHz @ 1000 W peak, 100 µsec pulse width, 20% duty cycle

Freescale Competitive Advantages


  • RF performance leadership
  • Package design
    • Freescale JEDEC-registered TO series is the leading over-molded plastic package series specifically designed for high power RF applications
    • Bolt down and solder reflow options
    • Multiple mounting configurations
    • 200°C TJ and above
  • Materials
    • RoHS compliant
  • Manufacturing
    • Internal dedicated RF power plastic manufacturing line
    • Over 30 million RF power plastic packages shipped with no known package related failures
    • Automated high volume assembly and test
    • Multiple manufacturing locations
  • Over-molded plastic
    • Solderable backmetal die attach = 20% better thermal results over epoxy
    • Package with a larger heatsink contact area for optimum thermal performance
  • Conventional ceramic packaging
    • Lower thermal resistance flange material
    • Higher on-package impedance matching
    • Higher power > 1 kW
    • Low Au solderable finish



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  • Freescale Technology Forum 2008
    • Tokyo, Japan
        September 10, 2008
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        October 7, 2008
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        November 5–6, 2008
    • Bangalore, India
        November 13–14, 2008
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