Design Files
3 design files
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Models
A5G08H800W19N Peaking Class AB S-Parameters
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Models
A5G08H800W19N Carrier Class AB S-Parameters
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Models
A5G08H800W19N Peaking Class C S-Parameters
865-960 MHz, 112 W Avg., 50 V Airfast® RF Power GaN Transistor
A5G08H800W19N Receive alerts
This 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 865 to 960 MHz.
This part is characterized and performance is guaranteed for applications operating in the 865 to 960 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Product Details
Features
- High terminal impedances for optimal broadband performance
- Advanced high performance in-package Doherty
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Plastic package
- RoHS compliant
Part numbers include: A5G08H800W19N.
RF Performance Table
900 MHz
Typical Doherty Single−Carrier W−CDMA Production Test Fixture Performance: VDD = 50 Vdc, IDQA = 350 mA, VGSB = –5.0 Vdc, Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
| Frequency | Gps (dB) | ηD (%) | Output PAR (dB) | ACPR (dBc) |
| 865 MHz | 19.3 | 60.5 | 8.8 | –28.0 |
| 913 MHz | 19.5 | 59.9 | 8.6 | –28.8 |
| 960 MHz | 19.1 | 58.7 | 8.3 | –30.5 |