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2450 MHz, 190 W, 28 V CW Lateral N-Channel RF Power MOSFET |
Active |
- |
I/O |
2450 to 2450 |
28 |
190 |
190 @ CW |
1-Tone |
13.2 @ 2450 |
46.2 |
0.22 |
AB |
LDMOS |
2450 |
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2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
2450 to 2450 |
28 |
140 |
140 @ CW |
1-Tone |
13.2 @ 2450 |
45 |
0.29 |
AB |
LDMOS |
2450 |
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10-450 MHz, 10 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
10 to 450 |
50 |
10 |
10 @ CW |
1-Tone |
23.9 @ 220 |
62 |
3 |
AB |
LDMOS |
450 |
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10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
10 to 450 |
50 |
150 |
150 @ CW |
1-Tone |
25 @ 220 |
68.3 |
0.24 |
AB |
LDMOS |
450 |
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10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
10 to 600 |
50 |
300 |
300 @ CW |
1-Tone |
25.5 @ 220 |
68 |
0.24 |
AB |
LDMOS |
600 |
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10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
10 to 600 |
50 |
300 |
300 @ CW |
1-Tone |
22 @ 450 |
60 |
0.24 |
AB |
LDMOS |
600 |
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10-150 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
10 to 150 |
50 |
1000 |
1000 @ Peak |
Pulsed |
26 @ 130 |
71 |
0.03 |
AB |
LDMOS |
150 |
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10-235 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
10 to 235 |
50 |
1000 |
1000 @ Peak |
Pulsed |
24 @ 225 |
67.5 |
0.03 |
AB |
LDMOS |
235 |
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10-250 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
10 to 250 |
50 |
600 |
125 @ AVG |
OFDM |
25 @ 225 |
28.5 |
0.2 |
AB |
LDMOS |
250 |
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10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
10 to 500 |
50 |
1000 |
1000 @ Peak |
Pulsed |
20 @ 450 |
64 |
0.03 |
AB |
LDMOS |
500 |
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2450 MHz, 20 W, 28 V CW RF LDMOS Integrated Power Amplifier |
Active |
- |
I/O |
2450 to 2450 |
28 |
20 |
20 @ CW |
1-Tone |
19.5 @ 2450 |
27 |
1.8 |
AB |
LDMOS |
2450 |
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100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier |
Active |
- |
I/O |
100 to 1000 |
28 |
6.5 |
6.5 @ CW |
1-Tone |
23.5 @ 900 |
34 |
3.2 |
AB |
LDMOS |
1000 |
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2450 MHz, 25 W CW, 28 V Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
2450 to 2450 |
28 |
25 |
25 @ CW |
1-Tone |
27.7 @ 2450 |
43.8 |
1.2 |
AB |
LDMOS |
2450 |
