prodTax=0124FY752000M29028`!componentId=7`!fromWebPages=true`!ProdStatus=Active`!SelectedAsset=Product Pages`!pageSize=200`!webpageId=M942446219028`!
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470-860 MHz, 180 W, 32 V Lateral N-Channel RF Power MOSFET |
Active |
- |
Input |
470 to 860 |
32 |
180 |
180 @ PEP |
2-Tone |
17 @ 860 |
36 |
0.5 |
AB |
LDMOS |
860 |
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470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
470 to 860 |
32 |
75 |
75 @ CW |
1-Tone |
18.2 @ 860 |
60 |
0.89 |
AB |
LDMOS |
860 |
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470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
470 to 860 |
32 |
75 |
75 @ CW |
1-Tone |
18.2 @ 860 |
60 |
0.63 |
AB |
LDMOS |
860 |
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470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
470 to 860 |
32 |
130 |
130 @ PEP |
2-Tone |
17.3 @ 860 |
41.2 |
0.58 |
AB |
LDMOS |
860 |
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470-860 MHz, 45 W Avg., 32 V Lateral N-Channel RF Power MOSFET |
Active |
- |
I/O |
470 to 860 |
32 |
235 |
45 @ AVG |
OFDM |
18.2 @ 860 |
23 |
0.27 |
AB |
LDMOS |
860 |
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470-860 MHz, 90 W PEP, 50 V Lateral N-Channel Singled-Ended Broadband RF Power MOSFETs |
Active |
- |
Input |
470 to 860 |
50 |
90 |
4.5 @ AVG |
OFDM |
21 @ 860 |
12 |
- |
AB |
LDMOS |
860 |
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860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Input |
470 to 860 |
50 |
450 |
90 @ AVG |
OFDM |
22.5 @ 860 |
28 |
0.27 |
AB |
LDMOS |
860 |
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860 MHz, 300 W, 32 V Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
470 to 860 |
32 |
300 |
270 @ PEP |
2-Tone |
20.4 @ 860 |
44.8 |
0.23 |
AB |
LDMOS |
860 |
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880 MHz, 10 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
880 to 960 |
28 |
45 |
10 @ AVG |
N-CDMA |
22.1 @ 880 |
32 |
1 |
AB |
LDMOS |
960 |
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880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
880 to 960 |
28 |
60 |
14 @ AVG |
N-CDMA |
21.1 @ 880 |
33 |
0.77 |
AB |
LDMOS |
960 |
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1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET |
Active |
- |
Unmatched |
1 to 2000 |
28 |
4 |
4 @ PEP |
2-Tone |
18 @ 1960 |
33 |
8.8 |
A
AB |
LDMOS |
2000 |
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450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
450 to 1500 |
28 |
10 |
10 @ PEP |
2-Tone |
18 @ 960 |
32 |
2.85 |
AB |
LDMOS |
1500 |
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100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier |
Active |
- |
I/O |
100 to 1000 |
28 |
6.5 |
6.5 @ CW |
1-Tone |
23.5 @ 900 |
34 |
3.2 |
AB |
LDMOS |
1000 |
