prodTax=0124FY752000M25554`!componentId=7`!fromWebPages=true`!ProdStatus=Active`!SelectedAsset=Product Pages`!pageSize=200`!webpageId=M939843445554`!
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880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
800 to 960 |
26 |
70 |
14 @ AVG |
N-CDMA |
17.8 @ 880 |
30 |
0.8 |
AB |
LDMOS |
960 |
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869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
869 to 960 |
26 |
80 |
80 @ CW |
1-Tone |
18 @ 960 |
59 |
0.5 |
AB |
LDMOS |
960 |
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880 MHz, 20 W Avg., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
880 to 960 |
26 |
100 |
20 @ AVG |
N-CDMA |
19.5 @ 880 |
28 |
0.52 |
AB |
LDMOS |
960 |
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869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
869 to 960 |
26 |
100 |
100 @ CW |
1-Tone |
17.5 @ 960 |
60 |
0.41 |
AB |
LDMOS |
960 |
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880 MHz, 33 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
880 to 960 |
28 |
150 |
33 @ AVG |
N-CDMA |
19.7 @ 880 |
28.4 |
0.34 |
AB |
LDMOS |
960 |
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921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFET |
Active |
- |
Input |
921 to 960 |
26 |
70 |
70 @ CW |
1-Tone |
16 @ 921
16 @ 960 |
58 |
1.1 |
AB |
LDMOS |
960 |
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920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
920 to 960 |
28 |
326 |
100 @ AVG |
W-CDMA |
19.4 @ 960 |
35.8 |
0.2 |
AB |
LDMOS |
960 |
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728-768 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET |
Active |
- |
I/O |
728 to 768 |
28 |
180 |
50 @ AVG |
W-CDMA |
19.5 @ 748 |
36 |
- |
AB |
LDMOS |
768 |
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920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
920 to 960 |
28 |
108 |
72 @ CW |
1-Tone |
19.3 @ 920 |
51.6 |
0.6 |
AB |
LDMOS |
960 |
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920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET |
Active |
- |
I/O |
920 to 960 |
28 |
177 |
50 @ AVG |
W-CDMA |
19.3 @ 920 |
36.5 |
0.33 |
AB |
LDMOS |
960 |
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920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET |
Active |
- |
I/O |
920 to 960 |
28 |
200 |
58 @ AVG |
W-CDMA |
19.9 @ 940 |
37.1 |
0.3 |
AB |
LDMOS |
960 |
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920-960 MHz, 65 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
920 to 960 |
28 |
220 |
65 @ AVG |
W-CDMA |
19.4 @ 960 |
35.7 |
0.32 |
AB |
LDMOS |
960 |
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920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
920 to 960 |
28 |
260 |
75 @ AVG |
W-CDMA |
18.6 @ 960 |
38.5 |
- |
AB |
LDMOS |
960 |
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1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
960 to 960 |
26 |
2 |
2 @ PEP |
2-Tone |
18 @ 960 |
50 |
12 |
AB |
LDMOS |
960 |
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945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
945 to 945 |
26 |
30 |
30 @ PEP |
2-Tone |
19 @ 945 |
41.5 |
1.9
1.5 |
AB |
LDMOS |
945 |
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945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
945 to 945 |
26 |
30 |
30 @ PEP |
2-Tone |
20 @ 945 |
41 |
1.08 |
AB |
LDMOS |
945 |
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945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
945 to 945 |
28 |
45 |
45 @ PEP |
2-Tone |
18.8 @ 945 |
42 |
1
1.4 |
AB |
LDMOS |
945 |
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945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
945 to 945 |
28 |
45 |
45 @ PEP |
2-Tone |
19 @ 945 |
41 |
0.85 |
AB |
LDMOS |
945 |
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945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
945 to 945 |
26
27 |
60 |
60 @ PEP |
WiMAX |
17 @ 945 |
40 |
1.1
1.2 |
AB |
LDMOS |
945 |
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945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
945 to 945 |
26 |
60 |
60 @ PEP |
2-Tone |
18 @ 945 |
40 |
0.56 |
AB |
LDMOS |
945 |
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921-960 MHz, 75 W, 26 V Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
921 to 960 |
26 |
80 |
70 @ CW |
1-Tone |
18.5 @ 921
18.5 @ 960 |
52 |
0.7 |
AB |
LDMOS |
960 |
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880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
880 to 880 |
26 |
85 |
90 @ PEP |
2-Tone |
17.9 @ 880 |
40 |
0.7 |
AB |
LDMOS |
880 |
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900 MHz, 110 W, 26 V, GSM/EDGE Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
921 to 960 |
26 |
100 |
100 @ CW |
1-Tone |
17.2 @ 960 |
60 |
1 |
AB |
LDMOS |
960 |
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880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET |
Active |
- |
Input |
880 to 880 |
26 |
120 |
120 @ PEP |
2-Tone |
16.5 @ 880 |
39 |
0.45 |
AB |
LDMOS |
880 |
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921-960 MHz, 130 W, 28 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
921 to 960 |
28 |
130 |
130 @ CW |
1-Tone |
16.5 @ 921
16.5 @ 960 |
48 |
0.6 |
AB |
LDMOS |
960 |
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880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
880 to 880 |
26 |
135 |
25 @ AVG |
N-CDMA |
17.8 @ 880 |
25 |
0.6 |
AB |
LDMOS |
880 |
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880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFET |
Active |
- |
Input |
880 to 880 |
26 |
180 |
170 @ PEP |
2-Tone |
17.5 @ 880 |
39 |
0.45 |
AB |
LDMOS |
880 |
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880 MHz, 40 W Avg., 26 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
880 to 880 |
26 |
200 |
40 @ AVG |
N-CDMA |
17.5 @ 880 |
25 |
0.28 |
AB |
LDMOS |
880 |
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880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET |
Active |
- |
I/O |
880 to 880 |
26 |
200 |
40 @ AVG |
N-CDMA |
16.5 @ 880 |
25.5 |
0.31 |
AB |
LDMOS |
880 |
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865-900 MHz, 47 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFET |
Active |
- |
I/O |
865 to 900 |
28 |
220 |
47 @ AVG |
N-CDMA |
20 @ 880 |
30 |
0.25 |
AB |
LDMOS |
900 |
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864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
864 to 894 |
28 |
47 |
35.5 @ CW |
1-Tone |
19.8 @ 894 |
57.7 |
1.7 |
AB |
LDMOS |
894 |
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880 MHz, 10 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
880 to 960 |
28 |
45 |
10 @ AVG |
N-CDMA |
22.1 @ 880 |
32 |
1 |
AB |
LDMOS |
960 |
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920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
920 to 960 |
28 |
45 |
35.5 @ CW |
1-Tone |
19 @ 960 |
57 |
1.3 |
AB |
LDMOS |
960 |
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880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET |
Active |
- |
Unmatched |
880 to 960 |
28 |
60 |
14 @ AVG |
N-CDMA |
21.1 @ 880 |
33 |
0.77 |
AB |
LDMOS |
960 |
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800 MHz, 27 W Avg., 28 V, Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
800 to 960 |
28 |
125 |
27 @ AVG |
N-CDMA |
20.2 @ 880 |
31 |
0.44 |
AB |
LDMOS |
960 |
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880 MHz, 27 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
880 to 960 |
28 |
130 |
27 @ AVG |
N-CDMA |
19.2 @ 880 |
30.5 |
0.45 |
AB |
LDMOS |
960 |
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940 MHz, 39 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
940 to 960 |
28 |
135 |
39 @ AVG |
W-CDMA |
21 @ 940 |
32.3 |
0.39 |
AB |
LDMOS |
960 |
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880 MHz, 35 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
880 to 960 |
28 |
160 |
35 @ AVG |
N-CDMA |
21 @ 880 |
31 |
0.31 |
AB |
LDMOS |
960 |
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880 MHz, 58 W Avg., 28 V, Single W-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
880 to 960 |
28 |
200 |
58 @ AVG |
W-CDMA |
21 @ 880 |
35 |
0.29 |
AB |
LDMOS |
960 |
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880 MHz, 40 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
880 to 960 |
28 |
200 |
40 @ AVG |
N-CDMA |
20.8 @ 880 |
31.3 |
0.34 |
AB |
LDMOS |
960 |
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880 MHz, 58 W Avg., 28 V, Single W-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
I/O |
880 to 960 |
28 |
200 |
58 @ AVG |
W-CDMA |
21.2 @ 880 |
34 |
0.27 |
AB |
LDMOS |
960 |
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800-900 MHz, 70 W, 28 V RF LDMOS Wideband 2-Stage Power Amplifiers |
Active |
- |
Input |
800 to 960 |
28 |
70 |
70 @ PEP |
2-Tone |
30 @ 870 |
48 |
0.8
5.2 |
AB |
LDMOS |
960 |
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1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET |
Active |
- |
Unmatched |
1 to 2000 |
28 |
4 |
4 @ PEP |
2-Tone |
18 @ 1960 |
33 |
8.8 |
A
AB |
LDMOS |
2000 |
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450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
450 to 1500 |
28 |
10 |
10 @ PEP |
2-Tone |
18 @ 960 |
32 |
2.85 |
AB |
LDMOS |
1500 |
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100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier |
Active |
- |
I/O |
100 to 1000 |
28 |
6.5 |
6.5 @ CW |
1-Tone |
23.5 @ 900 |
34 |
3.2 |
AB |
LDMOS |
1000 |