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450-480 MHz, 25 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
450 to 480 |
28 |
125 |
25 @ AVG |
N-CDMA |
23 @ 465 |
30.2 |
0.33 |
AB |
LDMOS |
480 |
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465 MHz, 28 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs |
Active |
- |
Input |
465 to 465 |
28 |
140 |
28 @ AVG |
N-CDMA |
21 @ 465 |
30 |
0.41 |
AB |
LDMOS |
465 |
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1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET |
Active |
- |
Unmatched |
1 to 2000 |
28 |
4 |
4 @ PEP |
2-Tone |
18 @ 1960 |
33 |
8.8 |
A
AB |
LDMOS |
2000 |
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450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs |
Active |
- |
Unmatched |
450 to 1500 |
28 |
10 |
10 @ PEP |
2-Tone |
18 @ 960 |
32 |
2.85 |
AB |
LDMOS |
1500 |
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100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier |
Active |
- |
I/O |
100 to 1000 |
28 |
6.5 |
6.5 @ CW |
1-Tone |
23.5 @ 900 |
34 |
3.2 |
AB |
LDMOS |
1000 |
