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  • RF Power

  • RF Industrial, Scientific and Medical Power Transistors
    • HF/VHF -- To 600 MHz
      • MRF6V2010N
      • MRF6V2150N
      • MRF6V2300N
      • MRF6V4300N
      • MRF6VP11KH
      • MRF6VP21KH
      • MRF6VP2600H
      • MRF6VP41KH
      • MW7IC008N
    • ISM Band -- 2.45 GHz
      • MRF6P24190HR6
      • MRF6S24140H
      • MW6IC2420NBR1
      • MW7IC2425N
  • RF LDMOS Power Transistors
    • Mobile -- To 520 MHz
      • MRF1511NT1
      • MRF1513NT1
      • MRF1517NT1
      • MRF1518NT1
      • MRF1535N
      • MRF1550N
      • MRF1570N
      • MRF9582NT1
    • TV Broadcast -- To 1000 MHz
      • MRF372
      • MRF373ALR1
      • MRF373ALSR1
      • MRF374A
      • MRF377H
      • MRF6V3090N
      • MRF6VP3450H
      • MRFE6P3300H
      • MRFE6S9045NR1
      • MRFE6S9060NR1
      • MW6S004NT1
      • MW6S010N
      • MW7IC008N
    • Cellular -- To 500 MHz
      • MRF5S4125N
      • MRF5S4140H
      • MW6S004NT1
      • MW6S010N
      • MW7IC008N
    • Cellular -- To 1000 MHz
      • MRF5S9070NR1
      • MRF5S9080N
      • MRF5S9100N
      • MRF5S9101N
      • MRF5S9150H
      • MRF6522_70
      • MRF8P9300H
      • MRF8S7170N
      • MRF8S9100H
      • MRF8S9170N
      • MRF8S9200N
      • MRF8S9220H
      • MRF8S9260H
      • MRF9002NR2
      • MRF9030L
      • MRF9030N
      • MRF9045L
      • MRF9045N
      • MRF9060L
      • MRF9060N
      • MRF9080L
      • MRF9085L
      • MRF9100L
      • MRF9120LR3
      • MRF9130L
      • MRF9135L
      • MRF9180R6
      • MRF9200L
      • MRF9210R3
      • MRFE6P9220H
      • MRFE6S8046N
      • MRFE6S9045NR1
      • MRFE6S9046N
      • MRFE6S9060NR1
      • MRFE6S9125N
      • MRFE6S9130H
      • MRFE6S9135H
      • MRFE6S9160H
      • MRFE6S9200H
      • MRFE6S9201H
      • MRFE6S9205H
      • MW5IC970N
      • MW6S004NT1
      • MW6S010N
      • MW7IC008N
    • Cellular -- To 1500 MHz
      • MRF7S15100H
    • L-Band -- 960-2000 MHz
      • MMG3014NT1
      • MMG3H21NT1
      • MRF6V10010N
      • MRF6V10250HS
      • MRF6V12250H
      • MRF6V12500H
      • MRF6V14300H
      • MRF6VP121KH
      • MRF7S15100H
      • MRF7S16150H
      • MRFE6S9045NR1
      • MRFE6S9060NR1
      • MW6S010N
    • S-Band -- 3100 - 3500 MHz
      • MRF7S35015HSR3
      • MRF7S35120HSR3
    • General Purpose LDMOS Drivers -- To 2100 MHz
      • MRF6S20010N
      • MW6S004NT1
      • MW6S010N
      • MW7IC008N
    • PCS & 3G -- To 2200 MHz
      • MD7P19130H
      • MRF18030ALR3
      • MRF18030ALSR3
      • MRF18030BLSR3
      • MRF18060AL
      • MRF18060BL
      • MRF18085AL
      • MRF18085BL
      • MRF18090AR3
      • MRF18090B
      • MRF19030L
      • MRF19045L
      • MRF19060L
      • MRF19085LR3
      • MRF19085LSR3
      • MRF19090R3
      • MRF19090SR3
      • MRF19125
      • MRF21010LSR1
      • MRF21030LR3
      • MRF21030LSR3
      • MRF21045LSR3
      • MRF21060L
      • MRF21085L
      • MRF21090
      • MRF21120R6
      • MRF21125
      • MRF21180R6
      • MRF281SR1
      • MRF281ZR1
      • MRF282SR1
      • MRF282ZR1
      • MRF284LSR1
      • MRF5P20180HR6
      • MRF5P21045NR1
      • MRF5P21180HR6
      • MRF5P21240HR6
      • MRF5S19060N
      • MRF5S19100H
      • MRF5S19130H
      • MRF5S19150H
      • MRF5S21045N
      • MRF5S21090H
      • MRF5S21090HSR3
      • MRF5S21100HR3
      • MRF5S21100HSR3
      • MRF5S21130HR3
      • MRF5S21130HSR3
      • MRF5S21150H
      • MRF6P18190HR6
      • MRF6P21190HR6
      • MRF6S18060N
      • MRF6S18100N
      • MRF6S18140H
      • MRF6S19060N
      • MRF6S19100H
      • MRF6S19100N
      • MRF6S19120H
      • MRF6S19140H
      • MRF6S19200H
      • MRF6S20010N
      • MRF6S21050L
      • MRF6S21060N
      • MRF6S21100H
      • MRF6S21100N
      • MRF6S21140H
      • MRF6S21190H
      • MRF7P20040H
      • MRF7S18125AH
      • MRF7S18125BH
      • MRF7S18170H
      • MRF7S19080H
      • MRF7S19100N
      • MRF7S19120NR1
      • MRF7S19170H
      • MRF7S19210H
      • MRF7S21080H
      • MRF7S21110H
      • MRF7S21150H
      • MRF7S21170H
      • MRF7S21210H
      • MRF8S18120H
      • MRF8S21100H
      • MRF8S21200H
  • RF GaAs Power Transistors
    • Linear Transistors -- To 6000 MHz
      • MRFG35002N6AT1
      • MRFG35003ANT1
      • MRFG35003N6AT1
      • MRFG35005ANT1
      • MRFG35010ANT1
      • MRFG35010AR1
      • MRFG35020AR1
  • RF WiMAX, WiBro, BWA Power Transistors
    • 1600 - 1700 MHz
      • MRF7S16150H
    • 2300 - 2400 MHz
      • MRF6P23190HR6
      • MRF6S23100H
      • MRF6S23140H
      • MRF6S27015N
    • 2500 - 2700 MHz
      • MD7IC2755N
      • MRF6P27160HR6
      • MRF6S27015N
      • MRF6S27050H
      • MRF6S27085H
      • MRF7S27130H
      • MW7IC2725N
      • MW7IC2750N
    • 3400 - 3800 MHz
      • MRF7S38010H
      • MRF7S38040H
      • MRF7S38075H
      • MW7IC3825N
    • DC - 6000 MHz
      • MRFG35002N6AT1
      • MRFG35003ANT1
      • MRFG35003N6AT1
      • MRFG35005ANT1
      • MRFG35010ANT1
      • MRFG35010AR1
      • MRFG35020AR1
  • RF Amplifier ICs
    • Base Station IC Drivers
      • MD7IC2050N
      • MD7IC21100N
      • MDE6IC7120N
      • MDE6IC9120N
      • MHV5IC1810NR2
      • MHV5IC2215NR2
      • MHVIC2114NR2
      • MHVIC910HNR2
      • MHVIC915NR2
      • MW4IC2020N
      • MW4IC2230N
      • MW4IC915N
      • MW5IC2030N
      • MW6IC1940N
      • MW6IC2015N
      • MW6IC2240N
      • MW7IC18100N
      • MW7IC2040N
      • MW7IC2220N
      • MW7IC2240N
      • MW7IC3825N
      • MW7IC915N
      • MW7IC930N
      • MWE6IC9100N
      • MWIC930N
  • Wideband RF Power Transistors
    • 135 - 520 MHz
      • MRF1511NT1
      • MRF1513NT1
      • MRF1518NT1
      • MRF1535N
      • MRF1550N
      • MRF1570N
    • 450 - 3000 MHz
      • MHVIC915NR2
      • MRF5S9070NR1
      • MRF6VP3450H
      • MRFE6P3300H
      • MRFE6S9045NR1
      • MRFE6S9060NR1
      • MW4IC915N
      • MW6S004NT1
      • MW6S010N
    • 1000 - 3800 MHz
      • MHV5IC2215NR2
      • MRF6P27160HR6
      • MRF6S20010N
      • MRF6S23100H
      • MRF6S27015N
      • MRF6S27050H
      • MRF6S27085H
      • MW5IC2030N
      • MW6IC2240N
      • MW7IC2725N
      • MW7IC2750N
      • MW7IC3825N
    • DC - 6000 MHz
      • MRFG35002N6AT1
      • MRFG35003ANT1
      • MRFG35003N6AT1
      • MRFG35005ANT1
      • MRFG35010ANT1
      • MRFG35010AR1
      • MRFG35020AR1
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  • Freescale
  • RF Power
  • RF LDMOS Power Transistors

 RF LDMOS Power Transistors
 

Freescale Semiconductor's industry leading LDMOS technology is ideally suited for RF power amplifier applications. Our product portfolio offers solutions for all major frequency bands and modulation formats: 900 MHz linear cellular, GSM, GSM EDGE, CDMA, digital television, PCS, UMTS, W-CDMA, TD-SCDMA and WiMAX.

Along with the unique LDMOS characteristics, these parts offer superior thermal performance. Additionally, the increasing demands for high-performing, cost-effective solutions are met with over-molded plastic packaging and multi-stage integration.



Link Mobile -- To 520 MHz

Link TV Broadcast -- To 1000 MHz


Link Cellular -- To 500 MHz

Link Cellular -- To 1000 MHz


Link Cellular -- To 1500 MHz


Link L-Band -- 960-2000 MHz


Link S-Band -- 3100 - 3500 MHz


Link General Purpose LDMOS Drivers -- To 2100 MHz

Link PCS & 3G -- To 2200 MHz



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Datasheet/ Part Data Hide
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ACTIVE
ARCHIV
Supply Voltage Hide
5
7.5
12.5
26
27
28
32
50
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P1dB Hide
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Output Power Hide
1 @ AVG
2 @ PEP
3 @ CW
4 @ PEP
4.5 @ AVG
6.3 @ CW
6.5 @ CW
8 @ CW
9.5 @ AVG
10 @ AVG
10 @ PEAK
10 @ PEP
11.5 @ AVG
12 @ AVG
14 @ AVG
15 @ PEAK
18 @ AVG
19 @ AVG
20 @ AVG
22 @ AVG
23 @ AVG
24 @ AVG
25 @ AVG
26 @ AVG
27 @ AVG
28 @ AVG
29 @ AVG
30 @ AVG
30 @ CW
30 @ PEP
32 @ AVG
33 @ AVG
35 @ AVG
35 @ CW
35.5 @ CW
36 @ AVG
38 @ AVG
39 @ AVG
40 @ AVG
44 @ AVG
45 @ AVG
45 @ PEP
47 @ AVG
48 @ AVG
50 @ AVG
50 @ CW
52 @ AVG
54 @ AVG
56 @ AVG
58 @ AVG
60 @ CW
60 @ PEP
63 @ AVG
65 @ AVG
70 @ CW
70 @ PEP
72 @ CW
75 @ AVG
75 @ CW
80 @ CW
85 @ CW
90 @ AVG
90 @ CW
90 @ PEP
100 @ AVG
100 @ CW
120 @ PEAK
120 @ PEP
125 @ CW
130 @ CW
130 @ PEP
170 @ PEP
180 @ PEP
250 @ PEAK
270 @ PEP
275 @ PEAK
330 @ PEAK
500 @ PEAK
1000 @ PEAK
Test Signal Hide
N-CDMA
OFDM
PULSED
W-CDMA
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prodTax=0124FY752000M2`!componentId=7`!fromWebPages=true`!ProdStatus=Active`!SelectedAsset=Product Pages`!pageSize=200`!webpageId=M2`!
Product (# of Parts)
Filter Datasheet/ Part Data
Filter Order
Description
Filter Product Page Status
Replacement Part
Matching
Frequency Band
(Min-Max)
(MHz)
(f)
Filter Supply Voltage
(Typ)
(V)
Filter P1dB
(Typ)
(W)
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(Typ)
(W)
@ Intermodulation Level at Test Signal
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(Typ)
(dB)
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MD7P19130H (2)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 130 40 @ AVG W-CDMA 20 @ 1990 30 0.31 AB LDMOS 1990
MMG3014NT1 (1)
DataSheetPart Number Table
Distributor
 
Sample
 40-4000 MHz, 19.5 dB, 25 dBm InGaP HBT Active - - 40 to 4000 5 - - - 19.5 @ 900 - 27.4 A InGaP HBT 4000
MMG3H21NT1 (1)
DataSheetPart Number Table
Distributor
 
Sample
 0-6000 MHz, 19.3 dB, 20.5 dBm InGaP HBT Active - - 0 to 6000 5 - - - 19.3 @ 900 - 38.6 A InGaP HBT 6000
MRF1511NT1 (1)
DataSheetPart Number Table
Distributor
 
 
 175 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 135 to 175 7.5 8 8 @ CW 1-Tone 13 @ 175 70 2 AB LDMOS 175
MRF1513NT1 (1)
DataSheetPart Number Table
Distributor
 
 
 520 MHz, 3 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 400 to 520 12.5
7.5		 3 3 @ CW 1-Tone 15 @ 520 65 4 AB LDMOS 520
MRF1517NT1 (1)
DataSheetPart Number Table
Distributor
 
 
 520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 430 to 520 7.5 8 8 @ CW 1-Tone 14 @ 520 70 2 AB LDMOS 520
MRF1518NT1 (1)
DataSheetPart Number Table
Distributor
 
 
 520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 400 to 520 12.5 8 8 @ CW 1-Tone 13 @ 520 60 2 AB LDMOS 520
MRF1535N (2)
DataSheetPart Number Table
Distributor
 
 
 520 MHz, 35 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 400 to 520 12.5 35 35 @ CW 1-Tone 13.5 @ 520 55 0.9 AB LDMOS 520
MRF1550N (2)
DataSheetPart Number Table
Distributor
 
 
 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 135 to 175 12.5 50 50 @ CW 1-Tone 14.5 @ 175 55 0.75 AB LDMOS 175
MRF1570N (2)
DataSheetPart Number Table
Distributor
 
 
 470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 400 to 470 12.5 70 70 @ CW 1-Tone 11.5 @ 470 60 0.29 AB LDMOS 470
MRF18030ALR3 (1)
DataSheetPart Number Table
Distributor
 
 
 1800-1880 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFET Active - I/O 1805 to 1880 26 30 30 @ CW 1-Tone 14 @ 1805
14 @ 1880		 50 2.1 AB LDMOS 1880
MRF18030ALSR3 (1)
DataSheetPart Number Table
Distributor
 
 
 1800-1880 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFET Active - I/O 1805 to 1880 26 30 30 @ CW 1-Tone 14 @ 1805
14 @ 1880		 50 2.1 AB LDMOS 1880
MRF18030BLSR3 (1)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFET Active - I/O 1930 to 1990 26 30 30 @ CW 1-Tone 14 @ 1930
14 @ 1990		 50 2.1 AB LDMOS 1990
MRF18060AL (2)
DataSheetPart Number Table
Distributor
 
 
 1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs Active - I/O 1805 to 1880 26 60 60 @ CW 1-Tone 13 @ 1805
13 @ 1880		 45 0.97 AB LDMOS 1880
MRF18060BL (2)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 26 60 60 @ CW 1-Tone 13 @ 1930
13 @ 1990		 45 0.97 AB LDMOS 1880
MRF18085AL (2)
DataSheetPart Number Table
Distributor
 
 
 1805-1880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs Active - I/O 1805 to 1880 26 83 85 @ CW 1-Tone 15 @ 1805
15 @ 1880		 52 0.79 AB LDMOS -
MRF18085BL (2)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 26 80 85 @ CW 1-Tone 12.5 @ 1930
12.5 @ 1990		 50 0.79 AB LDMOS 1990
MRF18090AR3 (1)
DataSheetPart Number Table
Distributor
 
 
 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET Active - I/O 1805 to 1880 26 90 90 @ CW 1-Tone 13.5 @ 1805
13.5 @ 1880		 52 0.7 AB LDMOS 1880
MRF18090B (2)
DataSheetPart Number Table
Distributor
 
 
 1.9-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 26 90 90 @ CW 1-Tone 13.5 @ 1930
13.5 @ 1990		 45 0.7 AB LDMOS 1990
MRF19030L (2)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 26 30 30 @ PEP 2-Tone 13 @ 1990 36 2.1 AB LDMOS 1990
MRF19045L (2)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 26 45 9.5 @ AVG N-CDMA 14.5 @ 1990 23.5 1.65 AB LDMOS 1990
MRF19060L (2)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 26 60 60 @ PEP 2-Tone 12.5 @ 1990 36 0.97 AB LDMOS 1990
MRF19085LR3 (1)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET Active - I/O 1930 to 1990 26 85 18 @ AVG N-CDMA 13 @ 1990 23 0.79 AB LDMOS 1990
MRF19085LSR3 (1)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET Active - I/O 1930 to 1990 26 85 18 @ AVG N-CDMA 13 @ 1990 23 0.79 AB LDMOS 1990
MRF19090R3 (1)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET Active - I/O 1930 to 1990 26 90 90 @ PEP 2-Tone 11.5 @ 1990 35 0.65 AB LDMOS 1990
MRF19090SR3 (1)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET Active - I/O 1930 to 1990 26 90 90 @ PEP 2-Tone 11.5 @ 1990 35 0.65 AB LDMOS 1990
MRF19125 (2)
DataSheetPart Number Table
Distributor
 
 
 1930-1990 MHz, 125 W, 26 V Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 26 125 24 @ AVG N-CDMA 13.5 @ 1990 22 0.53 AB LDMOS 1990
MRF21010LSR1 (1)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 2110 to 2170 28 10 10 @ PEP 2-Tone 13.5 @ 2170 35 5.5 AB LDMOS 2170
MRF21030LR3 (1)
DataSheetPart Number Table
Distributor
 
 
 2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 30 30 @ PEP 2-Tone 13 @ 2170 33 2.1 AB LDMOS 2170
MRF21030LSR3 (1)
DataSheetPart Number Table
Distributor
 
 
 2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 30 30 @ PEP 2-Tone 13 @ 2170 33 2.1 AB LDMOS 2170
MRF21045LSR3 (1)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 45 10 @ AVG W-CDMA 15 @ 2157.5 23.5 1.65 AB LDMOS 2170
MRF21060L (2)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 60 60 @ PEP 2-Tone 12.5 @ 2170 34 1.02 AB LDMOS 2170
MRF21085L (2)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 85 19 @ AVG W-CDMA 13.6 @ 2170 23 0.78 AB LDMOS 2170
MRF21090 (2)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 90 90 @ PEP 2-Tone 11.7 @ 2170 33 0.65 AB LDMOS 2170
MRF21120R6 (1)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 120 W, 28 V, Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 120 120 @ PEP 2-Tone 11.4 @ 2170 34.5 0.45 AB LDMOS 2170
MRF21125 (2)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 125 20 @ AVG W-CDMA 13 @ 2170 18 0.53 AB LDMOS 2170
MRF21180R6 (1)
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 2110-2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 180 38 @ AVG W-CDMA 12.1 @ 2170 22 0.46 AB LDMOS 2170
MRF281SR1 (1)
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 2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 1930 to 2000 26 4 4 @ PEP 2-Tone 12.5 @ 2000 33 5.74 A
AB		 LDMOS 2000
MRF281ZR1 (1)
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 2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 1930 to 2000 26 4 4 @ PEP 2-Tone 12.5 @ 2000 33 5.74 A
AB		 LDMOS 2000
MRF282SR1 (1)
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 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 1930 to 2000 26 10 10 @ PEP 2-Tone 11.5 @ 2000 32 4.2 A
AB		 LDMOS 2000
MRF282ZR1 (1)
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 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 1930 to 2000 26 10 10 @ PEP 2-Tone 11.5 @ 2000 32 4.2 A
AB		 LDMOS 2000
MRF284LSR1 (1)
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 2000 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 1930 to 2000 26 30 30 @ PEP 2-Tone 10.5 @ 2000 35 2 A
AB		 LDMOS 2000
MRF372 (3)
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 470-860 MHz, 180 W, 32 V Lateral N-Channel RF Power MOSFET Active - Input 470 to 860 32 180 180 @ PEP 2-Tone 17 @ 860 36 0.5 AB LDMOS 860
MRF373ALR1 (1)
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 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 470 to 860 32 75 75 @ CW 1-Tone 18.2 @ 860 60 0.89 AB LDMOS 860
MRF373ALSR1 (1)
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 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 470 to 860 32 75 75 @ CW 1-Tone 18.2 @ 860 60 0.63 AB LDMOS 860
MRF374A (1)
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 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 470 to 860 32 130 130 @ PEP 2-Tone 17.3 @ 860 41.2 0.58 AB LDMOS 860
MRF377H (1)
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 470-860 MHz, 45 W Avg., 32 V Lateral N-Channel RF Power MOSFET Active - I/O 470 to 860 32 235 45 @ AVG OFDM 18.2 @ 860 23 0.27 AB LDMOS 860
MRF5P20180HR6 (1)
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 1930-1990 MHz, 38 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET Active - I/O 1930 to 1990 28 180 38 @ AVG W-CDMA 14 @ 1990 26 0.33 AB LDMOS 1990
MRF5P21045NR1 (1)
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 2110-2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA, Dual Path Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 45 10 @ AVG W-CDMA 14.5 @ 2170 25.5 1.35 AB LDMOS 2170
MRF5P21180HR6 (1)
DataSheetPart Number Table
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 2110-2170 MHz, 38 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 180 38 @ AVG W-CDMA 14 @ 2170 25.5 0.31 AB LDMOS 2170
MRF5P21240HR6 (1)
DataSheetPart Number Table
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 2110-2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel Broadband RF Power MOSFET Active - I/O 2110 to 2170 28 240 52 @ AVG W-CDMA 13 @ 2170 24 0.29 AB LDMOS 2170
MRF5S19060N (2)
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 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 60 12 @ AVG N-CDMA 14 @ 1990 23 0.8 AB LDMOS 1990
MRF5S19100H (2)
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 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 100 22 @ AVG N-CDMA 13.9 @ 1990 25.5 0.64 AB LDMOS 1990
MRF5S19130H (2)
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 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 130 26 @ AVG N-CDMA 13 @ 1990 25 0.4 AB LDMOS 1990
MRF5S19150H (2)
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 1930-1990 MHz, 32 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 120 32 @ AVG N-CDMA 14 @ 1990 26 0.41 AB LDMOS 1990
MRF5S21045N (2)
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 2110-2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 45 10 @ AVG W-CDMA 14.5 @ 2170 25.5 1.35 AB LDMOS 2170
MRF5S21090H (1)
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 2110-2170 MHz, 19 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 90 19 @ AVG W-CDMA 14.5 @ 2170 26 0.65 AB LDMOS 2170
MRF5S21090HSR3 (1)
DataSheetPart Number Table
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 2110-2170 MHz, 19 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 90 19 @ AVG W-CDMA 14.5 @ 2170 26 0.65 AB LDMOS 2170
MRF5S21100HR3 (1)
DataSheetPart Number Table
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 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 100 23 @ AVG W-CDMA 13.5 @ 2170 26 0.57 AB LDMOS 2170
MRF5S21100HSR3 (1)
DataSheetPart Number Table
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 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET Archiv - I/O 2110 to 2170 28 100 23 @ AVG W-CDMA 13.5 @ 2170 26 0.57 AB LDMOS 2170
MRF5S21130HR3 (1)
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 2110-2170 MHz, 28 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 100 28 @ AVG W-CDMA 13.5 @ 2170 26 0.44 AB LDMOS 2170
MRF5S21130HSR3 (1)
DataSheetPart Number Table
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 2110-2170 MHz, 28 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 100 28 @ AVG W-CDMA 13.5 @ 2170 26 0.44 AB LDMOS 2170
MRF5S21150H (2)
DataSheetPart Number Table
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 2110-2170 MHz, 33 W Avg., 28 V 2 x W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 150 33 @ AVG W-CDMA 12.5 @ 2170 25 0.46 AB LDMOS 2170
MRF5S4125N (2)
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 450-480 MHz, 25 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs Active - Input 450 to 480 28 125 25 @ AVG N-CDMA 23 @ 465 30.2 0.33 AB LDMOS 480
MRF5S4140H (2)
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 465 MHz, 28 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs Active - Input 465 to 465 28 140 28 @ AVG N-CDMA 21 @ 465 30 0.41 AB LDMOS 465
MRF5S9070NR1 (1)
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 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 800 to 960 26 70 14 @ AVG N-CDMA 17.8 @ 880 30 0.8 AB LDMOS 960
MRF5S9080N (2)
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 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs Active - Input 869 to 960 26 80 80 @ CW 1-Tone 18 @ 960 59 0.5 AB LDMOS 960
MRF5S9100N (2)
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 880 MHz, 20 W Avg., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs Active - Input 880 to 960 26 100 20 @ AVG N-CDMA 19.5 @ 880 28 0.52 AB LDMOS 960
MRF5S9101N (2)
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 869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs Active - Input 869 to 960 26 100 100 @ CW 1-Tone 17.5 @ 960 60 0.41 AB LDMOS 960
MRF5S9150H (2)
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 880 MHz, 33 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs Active - Input 880 to 960 28 150 33 @ AVG N-CDMA 19.7 @ 880 28.4 0.34 AB LDMOS 960
MRF6522_70 (1)
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 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFET Active - Input 921 to 960 26 70 70 @ CW 1-Tone 16 @ 921
16 @ 960		 58 1.1 AB LDMOS 960
MRF6P18190HR6 (1)
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 1805-1880 MHz, 44 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET Active - I/O 1805 to 1880 28 190 44 @ AVG W-CDMA 15.9 @ 1805
15.9 @ 1880		 27.5 0.27 AB LDMOS 1880
MRF6P21190HR6 (1)
DataSheetPart Number Table
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 2110-2170 MHz, 44 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 190 44 @ AVG W-CDMA 15.5 @ 2170 26.5 0.25 AB LDMOS 2170
MRF6S18060N (2)
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 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs Active - I/O 1800 to 2000 26 60 60 @ CW 1-Tone 15 @ 1990 50 0.81 AB LDMOS 2000
MRF6S18100N (2)
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 1805-1990 MHz, 100 W, 28 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs Active - I/O 1805 to 1990 28 100 100 @ CW 1-Tone 14.5 @ 1930
14.5 @ 1990		 49 0.51 AB LDMOS 1990
MRF6S18140H (2)
DataSheetPart Number Table
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 1805-1880 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1805 to 1880 28 140 29 @ AVG N-CDMA 16 @ 1880 27.5 0.31 AB LDMOS 1880
MRF6S19060N (2)
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 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 60 12 @ AVG N-CDMA 16 @ 1990 26 0.84 AB LDMOS 1990
MRF6S19100H (2)
DataSheetPart Number Table
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 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 100 22 @ AVG N-CDMA 16.1 @ 1990 28 0.44 AB LDMOS 1990
MRF6S19100N (2)
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 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 100 22 @ AVG N-CDMA 14.5 @ 1990 25.5 0.61 AB LDMOS 1990
MRF6S19120H (2)
DataSheetPart Number Table
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 1930-1990 MHz, 19 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 120 19 @ AVG N-CDMA 15 @ 1990 21.5 0.43 AB LDMOS 1990
MRF6S19140H (2)
DataSheetPart Number Table
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 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 140 29 @ AVG N-CDMA 16 @ 1990 27.5 0.33 AB LDMOS 1990
MRF6S19200H (2)
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 1930-1990 MHz, 56 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 130 56 @ AVG W-CDMA 17.9 @ 1990 29.5 0.35 AB LDMOS 1990
MRF6S20010N (2)
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 1600-2200 MHz, 10 W, 28 V, GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs Active - Input 2110 to 2170 28 10 1 @ AVG W-CDMA 15.5 @ 2170 15 2.5 AB LDMOS 2170
MRF6S21050L (2)
DataSheetPart Number Table
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 2110-2170 MHz, 11.5 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 50 11.5 @ AVG W-CDMA 16 @ 2170 27.7 1.16 AB LDMOS 2170
MRF6S21060N (2)
DataSheetPart Number Table
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 2110-2170 MHz, 14 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 60 14 @ AVG W-CDMA 15.5 @ 2170 26 0.89 AB LDMOS 2170
MRF6S21100H (2)
DataSheetPart Number Table
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 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 100 23 @ AVG W-CDMA 15.9 @ 2170 27.6 0.45 AB LDMOS 2170
MRF6S21100N (2)
DataSheetPart Number Table
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 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 100 23 @ AVG W-CDMA 14.5 @ 2170 25.5 0.57 AB LDMOS 2170
MRF6S21140H (2)
DataSheetPart Number Table
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 2110-2170 MHz, 30 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFET Active - I/O 2110 to 2170 28 140 30 @ AVG W-CDMA 15.5 @ 2170 27.5 0.35 AB LDMOS 2170
MRF6S21190H (2)
DataSheetPart Number Table
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 2110-2170 MHz, 54 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 175 54 @ AVG W-CDMA 16 @ 2170 29 0.29 AB LDMOS 2170
MRF6V10010N (1)
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 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET Active - I/O 960 to 1400 50 10 10 @ Peak Pulsed 25 @ 1090 69 1.6 AB LDMOS 1400
MRF6V10250HS (1)
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 1090 MHz, 250 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET Active - I/O 1030 to 1090 50 250 250 @ Peak Pulsed 21 @ 1090 60 0.1 AB LDMOS 1090
MRF6V12250H (2)
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 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs Active - I/O 960 to 1215 50 275 275 @ Peak Pulsed 20.3 @ 1030 65.5 0.08 AB LDMOS 1215
MRF6V12500H (2)
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 965-1215 MHz, 500 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs Active - I/O 965 to 1215 50 500 500 @ Peak Pulsed 19.7 @ 1030 62 0.044 AB LDMOS 1215
MRF6V14300H (2)
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 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs Active - I/O 1200 to 1400 50 330 330 @ Peak Pulsed 18 @ 1400 60.5 0.13 AB LDMOS 1400
MRF6V3090N (2)
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 470-860 MHz, 90 W PEP, 50 V Lateral N-Channel Singled-Ended Broadband RF Power MOSFETs Active - Input 470 to 860 50 90 4.5 @ AVG OFDM 21 @ 860 12 - AB LDMOS 860
MRF6VP121KH (2)
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 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 965 to 1215 50 1000 1000 @ Peak Pulsed 20 @ 1030 56 0.02 AB LDMOS 1215
MRF6VP3450H (4)
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 860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs Active - Input 470 to 860 50 450 90 @ AVG OFDM 22.5 @ 860 28 0.27 AB LDMOS 860
MRF7P20040H (2)
DataSheetPart Number Table
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 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2010 to 2025 32 35 10 @ AVG W-CDMA 18.2 @ 2025 42.6 2.9 AB LDMOS 2025
MRF7S15100H (2)
DataSheetPart Number Table
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 1510 MHz, 23 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1470 to 1510 28 100 23 @ AVG W-CDMA 19.5 @ 1510 32 0.65 AB LDMOS 1510
MRF7S16150H (2)
DataSheetPart Number Table
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 1600-1660 MHz, 32 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs Active - I/O 1600 to 1660 28 150 32 @ AVG WiMAX 19.7 @ 1660 25.4 0.34 AB LDMOS 1660
MRF7S18125AH (2)
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 1805-1880 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs Active - I/O 1805 to 1880 28 140 125 @ CW 1-Tone 17 @ 1880 55 0.31 AB LDMOS 1880
MRF7S18125BH (2)
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 1930-1990 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 140 125 @ CW 1-Tone 16.5 @ 1990 55 0.31 AB LDMOS 1990
MRF7S18170H (2)
DataSheetPart Number Table
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 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1805 to 1880 28 170 50 @ AVG W-CDMA 17.5 @ 1880 31 0.27 AB LDMOS 1880
MRF7S19080H (2)
DataSheetPart Number Table
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 1930-1990 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 80 24 @ AVG W-CDMA 18 @ 1990 32 0.6 AB LDMOS 1990
MRF7S19100N (2)
DataSheetPart Number Table
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 1930-1990 MHz, 29 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 100 29 @ AVG W-CDMA 17.5 @ 1990 30 0.57 AB LDMOS 1990
MRF7S19120NR1 (1)
DataSheetPart Number Table
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 1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET Active - I/O 1930 to 1990 28 120 36 @ AVG W-CDMA 18 @ 1990 32 0.43 AB LDMOS 1990
MRF7S19170H (2)
DataSheetPart Number Table
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 1930-1990 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 170 50 @ AVG W-CDMA 17.2 @ 1990 32 0.25 AB LDMOS 1990
MRF7S19210H (2)
DataSheetPart Number Table
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 1930-1990 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 1930 to 1990 28 190 63 @ AVG W-CDMA 20 @ 1990 29 0.34 AB LDMOS 1990
MRF7S21080H (2)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 80 22 @ AVG W-CDMA 18 @ 2170 32 0.6 AB LDMOS 2170
MRF7S21110H (2)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 110 33 @ AVG W-CDMA 17.3 @ 2170 32.5 0.37 AB LDMOS 2170
MRF7S21150H (2)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 44 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 150 44 @ AVG W-CDMA 17.5 @ 2170 31 0.33 AB LDMOS 2170
MRF7S21170H (2)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 170 50 @ AVG W-CDMA 16 @ 2170 31 0.31 AB LDMOS 2170
MRF7S21210H (2)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 190 63 @ AVG W-CDMA 18.5 @ 2170 29 0.33 AB LDMOS 2170
MRF7S35015HSR3 (1)
DataSheetPart Number Table
Distributor
 
 
 3100-3500 MHz, 15 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET Active - I/O 3100 to 3500 32 15 15 @ Peak Pulsed 16 @ 3500 41 0.6 AB LDMOS 3500
MRF7S35120HSR3 (1)
DataSheetPart Number Table
Distributor
 
 
 3100-3500 MHz, 120 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET Active - I/O 3100 to 3500 32 120 120 @ Peak Pulsed 12 @ 3500 40 0.11 AB LDMOS 3500
MRF8P9300H (2)
DataSheetPart Number Table
Distributor
 
 
 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 920 to 960 28 326 100 @ AVG W-CDMA 19.4 @ 960 35.8 0.2 AB LDMOS 960
MRF8S18120H (2)
DataSheetPart Number Table
Distributor
 
 
 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs Active - I/O 1805 to 1880 28 120 72 @ CW 1-Tone 18.2 @ 1805 49.8 0.47 AB LDMOS 1880
MRF8S21100H (2)
 Part Number Table
 
 
 
 2110-2170 MHz, 24 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 100 24 @ AVG 1-Tone 18.5 @ 2140 34.5 - AB LDMOS 2170
MRF8S21200H (2)
DataSheetPart Number Table
Distributor
 
 
 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs Active - I/O 2110 to 2170 28 178 48 @ AVG W-CDMA 18.1 @ 2140 32.6 0.27 AB LDMOS 2170
MRF8S7170N (1)
 Part Number Table
Distributor
 
 
 728-768 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET Active - I/O 728 to 768 28 180 50 @ AVG W-CDMA 19.5 @ 748 36 - AB LDMOS 768
MRF8S9100H (2)
DataSheetPart Number Table
Distributor
 
 
 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs Active - Input 920 to 960 28 108 72 @ CW 1-Tone 19.3 @ 920 51.6 0.6 AB LDMOS 960
MRF8S9170N (1)
DataSheetPart Number Table
Distributor
 
 
 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET Active - I/O 920 to 960 28 177 50 @ AVG W-CDMA 19.3 @ 920 36.5 0.33 AB LDMOS 960
MRF8S9200N (1)
DataSheetPart Number Table
Distributor
 
 
 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET Active - I/O 920 to 960 28 200 58 @ AVG W-CDMA 19.9 @ 940 37.1 0.3 AB LDMOS 960
MRF8S9220H (2)
DataSheetPart Number Table
Distributor
 
 
 920-960 MHz, 65 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 920 to 960 28 220 65 @ AVG W-CDMA 19.4 @ 960 35.7 0.32 AB LDMOS 960
MRF8S9260H (2)
 Part Number Table
 
 
 
 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 920 to 960 28 260 75 @ AVG W-CDMA 18.6 @ 960 38.5 - AB LDMOS 960
MRF9002NR2 (1)
DataSheetPart Number Table
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 1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 960 to 960 26 2 2 @ PEP 2-Tone 18 @ 960 50 12 AB LDMOS 960
MRF9030L (2)
DataSheetPart Number Table
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 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 945 to 945 26 30 30 @ PEP 2-Tone 19 @ 945 41.5 1.9
1.5		 AB LDMOS 945
MRF9030N (2)
DataSheetPart Number Table
Distributor
 
 
 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 945 to 945 26 30 30 @ PEP 2-Tone 20 @ 945 41 1.08 AB LDMOS 945
MRF9045L (2)
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 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 945 to 945 28 45 45 @ PEP 2-Tone 18.8 @ 945 42 1
1.4		 AB LDMOS 945
MRF9045N (2)
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 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 945 to 945 28 45 45 @ PEP 2-Tone 19 @ 945 41 0.85 AB LDMOS 945
MRF9060L (2)
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 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 945 to 945 26
27		 60 60 @ PEP WiMAX 17 @ 945 40 1.1
1.2		 AB LDMOS 945
MRF9060N (2)
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 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 945 to 945 26 60 60 @ PEP 2-Tone 18 @ 945 40 0.56 AB LDMOS 945
MRF9080L (2)
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 921-960 MHz, 75 W, 26 V Lateral N-Channel RF Power MOSFETs Active - Input 921 to 960 26 80 70 @ CW 1-Tone 18.5 @ 921
18.5 @ 960		 52 0.7 AB LDMOS 960
MRF9085L (2)
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 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs Active - Input 880 to 880 26 85 90 @ PEP 2-Tone 17.9 @ 880 40 0.7 AB LDMOS 880
MRF9100L (2)
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 900 MHz, 110 W, 26 V, GSM/EDGE Lateral N-Channel RF Power MOSFETs Active - I/O 921 to 960 26 100 100 @ CW 1-Tone 17.2 @ 960 60 1 AB LDMOS 960
MRF9120LR3 (1)
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 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET Active - Input 880 to 880 26 120 120 @ PEP 2-Tone 16.5 @ 880 39 0.45 AB LDMOS 880
MRF9130L (2)
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 921-960 MHz, 130 W, 28 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs Active - Input 921 to 960 28 130 130 @ CW 1-Tone 16.5 @ 921
16.5 @ 960		 48 0.6 AB LDMOS 960
MRF9135L (2)
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 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs Active - Input 880 to 880 26 135 25 @ AVG N-CDMA 17.8 @ 880 25 0.6 AB LDMOS 880
MRF9180R6 (1)
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 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFET Active - Input 880 to 880 26 180 170 @ PEP 2-Tone 17.5 @ 880 39 0.45 AB LDMOS 880
MRF9200L (2)
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 880 MHz, 40 W Avg., 26 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 880 to 880 26 200 40 @ AVG N-CDMA 17.5 @ 880 25 0.28 AB LDMOS 880
MRF9210R3 (1)
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 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET Active - I/O 880 to 880 26 200 40 @ AVG N-CDMA 16.5 @ 880 25.5 0.31 AB LDMOS 880
MRF9582NT1 (1)
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 849 MHz, 38 dBm, 12.5 V High Frequency Power Transistor LDMOS FET Active - Unmatched 900 to 900 12.5 6 6.3 @ CW 1-Tone 10.5 @ 849 55 6 AB LDMOS 900
MRFE6P3300H (2)
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 860 MHz, 300 W, 32 V Lateral N-Channel RF Power MOSFETs Active - I/O 470 to 860 32 300 270 @ PEP 2-Tone 20.4 @ 860 44.8 0.23 AB LDMOS 860
MRFE6P9220H (1)
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 865-900 MHz, 47 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFET Active - I/O 865 to 900 28 220 47 @ AVG N-CDMA 20 @ 880 30 0.25 AB LDMOS 900
MRFE6S8046N (2)
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 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs Active - I/O 864 to 894 28 47 35.5 @ CW 1-Tone 19.8 @ 894 57.7 1.7 AB LDMOS 894
MRFE6S9045NR1 (1)
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 880 MHz, 10 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 880 to 960 28 45 10 @ AVG N-CDMA 22.1 @ 880 32 1 AB LDMOS 960
MRFE6S9046N (2)
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 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs Active - I/O 920 to 960 28 45 35.5 @ CW 1-Tone 19 @ 960 57 1.3 AB LDMOS 960
MRFE6S9060NR1 (1)
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 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET Active - Unmatched 880 to 960 28 60 14 @ AVG N-CDMA 21.1 @ 880 33 0.77 AB LDMOS 960
MRFE6S9125N (2)
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 800 MHz, 27 W Avg., 28 V, Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs Active - Input 800 to 960 28 125 27 @ AVG N-CDMA 20.2 @ 880 31 0.44 AB LDMOS 960
MRFE6S9130H (2)
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 880 MHz, 27 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs Active - Input 880 to 960 28 130 27 @ AVG N-CDMA 19.2 @ 880 30.5 0.45 AB LDMOS 960
MRFE6S9135H (2)
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 940 MHz, 39 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 940 to 960 28 135 39 @ AVG W-CDMA 21 @ 940 32.3 0.39 AB LDMOS 960
MRFE6S9160H (2)
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 880 MHz, 35 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs Active - Input 880 to 960 28 160 35 @ AVG N-CDMA 21 @ 880 31 0.31 AB LDMOS 960
MRFE6S9200H (2)
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 880 MHz, 58 W Avg., 28 V, Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - Input 880 to 960 28 200 58 @ AVG W-CDMA 21 @ 880 35 0.29 AB LDMOS 960
MRFE6S9201H (2)
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 880 MHz, 40 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs Active - Input 880 to 960 28 200 40 @ AVG N-CDMA 20.8 @ 880 31.3 0.34 AB LDMOS 960
MRFE6S9205H (2)
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 880 MHz, 58 W Avg., 28 V, Single W-CDMA Lateral N-Channel RF Power MOSFETs Active - I/O 880 to 960 28 200 58 @ AVG W-CDMA 21.2 @ 880 34 0.27 AB LDMOS 960
MW5IC970N (2)
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 800-900 MHz, 70 W, 28 V RF LDMOS Wideband 2-Stage Power Amplifiers Active - Input 800 to 960 28 70 70 @ PEP 2-Tone 30 @ 870 48 0.8
5.2		 AB LDMOS 960
MW6S004NT1 (1)
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 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET Active - Unmatched 1 to 2000 28 4 4 @ PEP 2-Tone 18 @ 1960 33 8.8 A
AB		 LDMOS 2000
MW6S010N (2)
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 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs Active - Unmatched 450 to 1500 28 10 10 @ PEP 2-Tone 18 @ 960 32 2.85 AB LDMOS 1500
MW7IC008N (1)
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 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier Active - I/O 100 to 1000 28 6.5 6.5 @ CW 1-Tone 23.5 @ 900 34 3.2 AB LDMOS 1000


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