The MW7IC2240NR1, MW7IC2240GNR1 and MW7IC2240NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 2000 to 2200 MHz. This multi-stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD-SCDMA.
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Features
- Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 Watts Avg., Full Frequency Band (2110–2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% Probability on CCDF.
- Power Gain: 30 dB
- Power Added Efficiency: 14%
- ACPR @ 5 MHz Offset: –50 dBc in 3.84 MHz Bandwidth
- Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW Output Power
- Pout @ 1 dB Compression Point = 40 Watts CW
- Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 10 Watts CW Pout.
- Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
- On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS Compliant.
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Product Specifications
| Frequency Band - Min-Max (MHz)(f) | 2110 to 2170 |
| P1dB - Typ (W) | 40 |
| Output Power - Typ (W)(P1dB) | 40 |
| Gain - Typ (dB) | 30 |
| Supply Voltage - Typ (V) | 28 |
| Class | AB |
| System Application | W-CDMA |
| Die Technology | LDMOS |
