MRFE6VP61K25H: 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors  Favorite



These high ruggedness devices, MRFE6VP61K25HR6, MRFE6VP61K25HSR5 and MRFE6VP61K25GSR5, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Typical Narrowband Performance


VDD = 50 Volts, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Pulse
(100 µsec, 20% Duty Cycle)
1250 Peak23024.074.0
CW 1250 CW23022.974.6

Application Circuits — Typical Performance


Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
27CW13002781
40CW13002685
81.36CW12502784
87.5-108CW11002480
144-148CW12502678
170-230DVBT2252530
352Pulse
(200 µsec,
20% Duty Cycle)
125021.566
352CW115020.568
500CW10001858

Load Mismatch/Ruggedness


Frequency
(MHz)
Signal Type VSWR Pout
(W)
Test
Voltage
Result
230 Pulse
(100 µsec,
20% Duty Cycle)
>65:1 at all
Phase Angles
1500 Peak
(3 dB Overdrive)
50 No Device
Degradation
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Features


  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.
  • These products are included in Freescale's product longevity program with assured supply for a minimum of 10 years after launch.

NOTE: PARTS ARE PUSH–PULL

Product Specifications

MatchingUnmatched
Frequency Band - Min-Max (MHz)1.8 to 600
Supply Voltage - Typ (V)50
P1dB - Typ (W)1250
Output Power - Typ (W) @ Intermodulation Level at Test Signal1250 @ CW
Test Signal1-Tone
Power Gain - Typ (dB) @ f
(MHz)
22.9 @ 230
Efficiency - Typ (%)74.6
Thermal Resistance - Spec (�CW)0.15
ClassAB
Die TechnologyLDMOS