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MRF8P20165WH: 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs  Favorite



The MRF8P20165WHR3 and MRF8P20165WHSR3 are designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz.
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Features


  • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
    Frequency Gps
    (dB)
    ηD
    (%)
    Output PAR
    (dB)
    ACPR
    (dBc)
    1930 MHz16.147.07.1–27.7
    1960 MHz16.347.77.1–29.7
    1995 MHz16.346.07.0–33.3
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW Output Power (2 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 190 Watts
  • Designed for Wide Instantaneous Bandwidth Applications. VBWres 100 MHz.
  • Designed for Wideband Applications that Require 65 MHz Signal Bandwidth
  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
  • NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

Product Specifications

MatchingI/O
Frequency Band - Min-Max (MHz)1930 to 1995
Supply Voltage - Typ (V)28
P1dB - Typ (W)104
Output Power - Typ (W) @ Intermodulation Level at Test Signal37 @ AVG
Test SignalW-CDMA
Power Gain - Typ (dB) @ f
(MHz)
16.3 @ 1960
Efficiency - Typ (%)47.7
Thermal Resistance - Spec (�CW)0.79
ClassAB
Die TechnologyLDMOS