MRF8P20140WH: 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs  Favorite



The MRF8P20140WHR3 and MRF8P20140WHSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

2000 MHz


Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz16.042.88.0–31.0
1920 MHz16.043.78.1–32.6
2025 MHz15.942.08.1–31.2
  • Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 170 Watts
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Features


  • Designed for Wide Instantaneous Bandwidth Applications. VBWres 240 MHz.
  • Designed for Wideband Applications that Require 160 MHz Signal Bandwidth
  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
  • NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

Product Specifications

MatchingI/O
Frequency Band - Min-Max (MHz)1880 to 2025
Supply Voltage - Typ (V)28
P1dB - Typ (W)140
Output Power - Typ (W) @ Intermodulation Level at Test Signal24 @ AVG
Test SignalW-CDMA
Power Gain - Typ (dB) @ f
(MHz)
16 @ 1920
Efficiency - Typ (%)43.7
Thermal Resistance - Spec (�CW)0.68
ClassAB
Die TechnologyLDMOS