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  • Freescale
  • RF Power
  • RF LDMOS Power Transistors
  • TV Broadcast -- To 1000 MHz
  • MRF6VP3450H

MRF6VP3450H: 860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs


http://www.freescale.com/webapp/sps/site/prod_summary.jsp?code=MRF6VP3450H&nodeId=0106B9752000M29028
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The MRF6VP3450HR6, MRF6VP3450HSR6, MRF6VP3450HR5 and MRF6VP3450HSR5 are designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 50 volt analog or digital television transmitter equipment.
View Product Image

Features


  • Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
    Power Gain: 22.5 dB
    Drain Efficiency: 28%
    ACPR @ 4 MHz Offset: –62 dBc @ 4 kHz Bandwidth
  • Typical Broadband Two-Tone Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 450 Watts PEP, f = 470-860 MHz
    Power Gain: 22 dB
    Drain Efficiency: 44%
    IM3: –29 dBc
  • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:
    450 Watts CW
    90 Watts Avg. (DVB-T OFDM Signal, 10 dB PAR, 7.61 MHz Channel Bandwidth)
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Excellent Thermal Stability
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
    R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

NOTE: PARTS ARE PUSH–PULL

Product Specifications

MatchingInput
Frequency Band - Min-Max (MHz)(f)470 to 860
Supply Voltage - Typ (V)50
P1dB - Typ (W)450
Output Power - Typ (W) @ Intermodulation Level at Test Signal90 @ AVG
Test SignalOFDM
Power Gain - Typ (dB) @ f
(MHz)
22.5 @ 860
Efficiency - Typ (%)28
Thermal Resistance - Spec (°CW)0.27
ClassAB
Die TechnologyLDMOS

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