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  • RF Power
  • RF Industrial, Scientific and Medical Power Transistors
  • HF/VHF -- To 600 MHz
  • MRF6VP2600H

MRF6VP2600H: 10-250 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET


http://www.freescale.com/webapp/sps/site/prod_summary.jsp?code=MRF6VP2600H&nodeId=0106B97520022A0225
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The MRF6VP2600HR6 is designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.
View Product Image

Features


  • Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
    Power Gain: 25 dB
    Drain Efficiency: 28.5%
    ACPR @ 4 MHz Offset: –61 dBc @ 4 kHz Bandwidth
  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%
    Power Gain: 25.3 dB
    Drain Efficiency: 59%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 µsec, Duty Cycle = 20%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • CW Operation Capability with Adequate Cooling
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

NOTE: PART IS PUSH–PULL

Product Specifications

MatchingUnmatched
Frequency Band - Min-Max (MHz)(f)10 to 250
Supply Voltage - Typ (V)50
P1dB - Typ (W)600
Output Power - Typ (W) @ Intermodulation Level at Test Signal125 @ AVG
Test SignalOFDM
Power Gain - Typ (dB) @ f
(MHz)
25 @ 225
Efficiency - Typ (%)28.5
Thermal Resistance - Spec (°CW)0.2
ClassAB
Die TechnologyLDMOS

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