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  • Freescale
  • RF Power
  • RF Industrial, Scientific and Medical Power Transistors
  • HF/VHF -- To 600 MHz
  • MRF6VP21KH

MRF6VP21KH: 10-235 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET


http://www.freescale.com/webapp/sps/site/prod_summary.jsp?code=MRF6VP21KH&nodeId=0106B97520022A0225
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The MRF6VP21KHR6 is designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.
View Product Image

Features


  • Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%
    Power Gain: 24 dB
    Drain Efficiency: 67.5%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak Power
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Excellent Thermal Stability
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel

NOTE: PART IS PUSH–PULL

Product Specifications

MatchingUnmatched
Frequency Band - Min-Max (MHz)(f)10 to 235
Supply Voltage - Typ (V)50
P1dB - Typ (W)1000
Output Power - Typ (W) @ Intermodulation Level at Test Signal1000 @ Peak
Test SignalPulsed
Power Gain - Typ (dB) @ f
(MHz)
24 @ 225
Efficiency - Typ (%)67.5
Thermal Resistance - Spec (°CW)0.03
ClassAB
Die TechnologyLDMOS

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