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MRF6V3090N: 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors  Favorite



The MRF6V3090NR1, MRF6V3090NBR1, MRF6V3090NR5 and MRF6V3090NBR5 are designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications.
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Features


  • Typical Performance (Narrowband Test Circuit): VDD = 50 Volts, IDQ = 350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
    Signal Type Pout
    (W)
    f
    (MHz)
    Gps
    (dB)
    ηD
    (%)
    ACPR
    (dBc)
    DVB-T (8k OFDM) 18 Avg.860 22.028.5–62.0
  • Typical Performance (Broadband Reference Circuit): VDD = 50 Volts, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
    Signal Type Pout
    (W)
    f
    (MHz)
    Gps
    (dB)
    ηD
    (%)
    Output
    Signal PAR
    (dB)
    IMD Shoulder
    (dBc)
    DVB-T (8k OFDM) 18 Avg. 47021.626.88.6–31.8
    65022.928.08.7–34.4
    86021.928.37.9–29.2
  • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Input Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Excellent Thermal Stability
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
    R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

NOTE: PARTS ARE SINGLE–ENDED

Product Specifications

MatchingInput
Frequency Band - Min-Max (MHz)470 to 860
Supply Voltage - Typ (V)50
P1dB - Typ (W)90
Output Power - Typ (W) @ Intermodulation Level at Test Signal18 @ AVG
Test SignalOFDM
Power Gain - Typ (dB) @ f
(MHz)
22 @ 860
Efficiency - Typ (%)28.5
Thermal Resistance - Spec (�CW)0.79
ClassAB
Die TechnologyLDMOS