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  • RF Power
  • RF LDMOS Power Transistors
  • TV Broadcast -- To 1000 MHz
  • MRF6V3090N

MRF6V3090N: 470-860 MHz, 90 W PEP, 50 V Lateral N-Channel Singled-Ended Broadband RF Power MOSFETs


http://www.freescale.com/webapp/sps/site/prod_summary.jsp?code=MRF6V3090N
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PREPRODUCTION

The MRF6V3090N and MRF6V3090NB are designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications.

This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.

For additional information and sample availability contact your local Freescale Sales Office or Freescale Authorized Distributor.
View Product Image

Features


  • Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 4.5 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 21 dB
    Drain Efficiency: 12%
    ACPR @ 4 MHz Offset: –68 dBc @ 4 kHz Bandwidth
  • Typical Broadband Two-Tone Performance: VDD = 50 Volts, IDQ= 350 mA, Pout = 90 Watts PEP, f = 470-860 MHz
    Power Gain: 21 dB
    Drain Efficiency: >40%
    IM3: <–30 dBc
  • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Input Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Excellent Thermal Stability
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant

NOTE: PARTS ARE SINGLE–ENDED

Product Specifications

MatchingInput
Frequency Band - Min-Max (MHz)(f)470 to 860
Supply Voltage - Typ (V)50
P1dB - Typ (W)90
Output Power - Typ (W) @ Intermodulation Level at Test Signal4.5 @ AVG
Test SignalOFDM
Power Gain - Typ (dB) @ f
(MHz)
21 @ 860
Efficiency - Typ (%)12
ClassAB
Die TechnologyLDMOS

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