In a world of ever increasing demand for higher efficiency RF power amplifier system performance, Freescale delivers technology to exceed those needs now and in the future. To this end, Freescale is developing gallium nitride hetero-junction field effect transistors (GaN HFETs) to address emerging high-power, high-efficiency RF applications. With higher breakdown field strength than Si and higher electron density than GaA devices at equivalent speeds, GaN HFET devices allow order of magnitude higher power densities, higher breakdown voltages and lower on-resistances than conventional SI or GaAs solutions.
- High power density translates into 3 5x higher input and output impedances and bandwidth for a given output power than traditional silicon or GaA solutions.
- High fT, coupled with extremely low on-resistance and high breakdown voltage, make this technology ideal for high-efficiency RF power amplifier architectures.
- Wide bandgap and high temperature processing allow for reliable operation beyond 200°C.
The advantages of GaN coupled with Freescale’s leadership position in RF power make Freescale uniquely positioned to optimally match GaN technology to those RF applications that maximally leverage the significant advantages of the technology.
