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RF Power Transistors for Higher Performance


Freescale’s continued technology advancements provide cost-effective, reliable, field-proven solutions for the commercial aerospace market.

Application Examples

  • Weather Radar
  • Air Traffic Management
  • Distance Measuring Equipment (DME)

Freescale is the first to offer a robust portfolio to the commercial aerospace market that includes 50V LDMOS devices up to 1kW of output power and 32V LDMOS devices up to 3500 MHz. Freescale's proven LDMOS technology brings enhancements to aerospace designs with higher gain, lower thermal resistance and higher efficiency for applications ranging from the HF to S-bands.

Freescale Competitive Advantages

  • Highest gain figures in the industry—up to 25.5 dB
  • Highest efficiency in the industry—up to 71% (Class AB at P1dB)
  • High efficiency combined with low thermal resistance:
    • Reduces system cooling requirements
    • Lowers junction temperature, increasing MTTF
  • Comprehensive LDMOS solutions from HF to S-band
  • 50V LDMOS lineups from HF to L-band
  • Cost-effective, over-molded plastic packaging options
  • Backed by Freescale's secure volume manufacturing capability
  • Proven reliability, quality and consistency
  • Integrated ESD protection
  • World-class, global applications and design support
  • RoHS compliant
  • Field-proven high-voltage LDMOS process

Product Performance

 Link  HF/VHF/UHF, L-Band – 50 Volt            Link  S-Band – 32 Volt
 
RF Power Aerospace Portfolio
 
Performance Table for UHF/L-Band Aerospace — 50 Volt Devices  [Top]
Part Number Voltage
(V)		 Operating
Frequency
(MHz)		 Rated
Power
(W)		 Technology Package ΘJC
°C/W		 Typical
Gain
(dB)		 Typical
Efficiency
(%)		 Reference
Designs
(MHz)
HF/VHF/UHF
MRF6V2010N/NB 50 10-450 10 CW VHV6 Over-Molded 3(2) 23.9 62 27, 64, 130,
220, 450
MRF6V4300N/NB 50 10-600 300 CW VHV6 Over-Molded 0.24(2) 25.5 60 450
MRF6VP11KH 50 10-150 1000(1) VHV6 Air Cavity 0.03(3) 26 71 30 CW, 81 CW,
100 CW, 130
MRF6VP41KH/HS 50 10-450 1000(1) VHV6 Air Cavity 0.03(4) 20 64 352 CW, 450,
500
L-Band
MRF6V10010N 50 960-1400 10(1) VHV6 Over-Molded 1.6(5) 25 69 1090
MRF6V12250H/HS 50 965-1215 275(1) VHV6 Air Cavity 0.08(6) 20.3 65.5 965-1215, 1030
MRF6V14300H/HS 50 1200-1400 330(1) VHV6 Air Cavity 0.13(7) 18 60.5 1200-1400
MRF6V12500H/HS 50 965-1215 500(1) VHV6 Air Cavity 0.044(8) 19.7 62 1030
MRF6VP121KH/HS 50 965-1215 1000(1) VHV6 Air Cavity 0.02(9) 20 56 785, 1030, 1090

Performance Table for S-Band Aerospace — 32 Volt Devices		  [Top]
Part Number Voltage
(V)		 Operating
Frequency
(MHz)		 Rated
Power
(W)		 Technology Package ΘJC
°C/W		 Typical
Gain
(dB)		 Typical
Efficiency
(%)		 Reference
Designs
(MHz)
S-Band
MRF7S35015HS 32 3100-3500 15(1) HV7 Air Cavity 0.06(10) 16 41 3500
MRF7S35120HS 32 3100-3500 120(1) HV7 Air Cavity 0.11(11) 12 40 3500
(1) Peak Power 
(2) Thermal resistance is determined under specified RF operating conditions: 220 MHz @ CW rated power. MRF6V4300N: 450 MHz @ CW rated power 
(3) Preliminary thermal resistance is determined under specified RF operating conditions: 130 MHz @ 1000 W peak, 100 µsec pulse width, 20% duty cycle 
(4) Preliminary thermal resistance is determined under specified RF operating conditions: 450 MHz @ 1000 W peak, 100 µsec pulse width, 20% duty cycle 
(5) Preliminary thermal resistance is determined under specified RF operating conditions: 1090 MHz @ 10 W peak, 100 µsec pulse width, 20% duty cycle 
(6) Preliminary thermal resistance is determined under specified RF operating conditions: 1030 MHz @ 275 W peak, 128 µsec pulse width, 10% duty cycle 
(7) Preliminary thermal resistance is determined under specified RF operating conditions: 1400 MHz @ 330 W peak, 300 µsec pulse width, 12% duty cycle 
(8) Preliminary thermal resistance is determined under specified RF operating conditions: 1030 MHz @ 500 W peak, 128 µsec pulse width, 10% duty cycle 
(9) Preliminary thermal resistance is determined under specified RF operating conditions: 1030 MHz @ 1000 W peak, 128 µsec pulse width, 10% duty cycle 
(10) Preliminary thermal resistance is determined under specified RF operating conditions: 3500 MHz @ 15 W peak, 100 µsec pulse width, 20% duty cycle 
(11) Preliminary thermal resistance is determined under specified RF operating conditions: 3500 MHz @ 120 W peak, 100 µsec pulse width, 20% duty cycle 
 
RF Power Aerospace Line-ups
 
MTTF Calculation Programs

Freescale's MTTF/FIT calculator software is designed to assist our customers in estimating the LDMOS device reliability in terms of electromigration wear-out failures. The program evaluates LDMOS device Median-Time-To-Failure (MTTF) using Black's Equations.


Reference Designs

Freescale Semiconductor is pleased to offer application-specific reference designs. These application-specific reference designs show some of the many possible uses of our high power RF transistors. They provide the customer's design engineers with a fast and accurate tool to both evaluate the performance envelope and fully characterize the devices under a variety of different operating conditions.

For additional information and/or availability contact your local Freescale Sales Office or Freescale Authorized Distributor.

HF/VHF/UHF/L-Band Aerospace — 50 Volt Devices  [Top]
Part Number Reference Designs
(MHz)
HF/VHF/UHF
MRF6V2010N/NB 27, 64, 130, 220, 450
MRF6V4300N/NB 450
MRF6VP11KH 30 CW, 81 CW, 100 CW, 130
MRF6VP41KH/HS 352 CW, 450, 500
L-Band
MRF6V10010N 1090
MRF6V12250H/HS 965-1215, 1030
MRF6V14300H/HS 1200-1400
MRF6V12500H/HS 1030
MRF6VP121KH/HS
* Preliminary
 785, 1030, 1090
S-Band Aerospace — 32 Volt Devices  [Top]
Part Number Reference Designs
(MHz)
S-Band
MRF7S35015HS 3500
MRF7S35120HS 3500


RF High Power Models

Freescale Semiconductor continues to populate its RF High Power Model Library with MET and Root models. All product models available in the RF High Power Model Library (Root and MET) include package, bond wire and internal matching network effects.

The current release of the MET model is available for Agilent EEsof ADS®  nonlinear circuit simulator


Application Notes
  • AN1907 — Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages
  • AN3263 — Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
  • AN3789 — Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Freescale Competitive Advantages

  • RF performance leadership
  • Package design
    • Freescale JEDEC-registered TO series is the leading over-molded plastic package series specifically designed for high power RF applications
    • Bolt down and solder reflow options
    • Multiple mounting configurations
    • 200°C TJ and above
  • Materials
    • RoHS compliant

RF Aerospace Chip Set
  • Manufacturing
    • Internal dedicated RF power plastic manufacturing line
    • Over 80 million RF power plastic packages shipped with no known package related failures
    • Automated high volume assembly and test
    • Multiple manufacturing locations
  • Over-molded plastic
    • Solderable backmetal die attach = 20 percent better thermal results over epoxy
    • Package with a larger heatsink contact area for optimum thermal performance
  • Conventional ceramic packaging
    • Lower thermal resistance flange material
    • Higher on-package impedance matching
    • Higher power > 1 kW
    • Low Au solderable finish

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