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Broadcast Solutions
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RF Broadcasting Solutions

Higher RF Performance and Power Densities


The broadcast industry is rapidly moving to digital modulation from the analog modulation schemes it has employed for more than 70 years. Adoption of digital broadcasting in the United States will replace all analog modulation schemes, and nearly all broadcasters throughout the world will soon be "fully digital". This conversion places significant demands on the transmitter's power amplifier as well as the RF power transistors because the signals have very high peak-to-average ratios. As a result, RF power transistors designed for this application must exhibit extremely high linearity under a wide range of operating conditions, as well as high efficiency and ruggedness to ensure long operating life.

Freescale has a comprehensive portfolio of broadcast devices to support the needs of FM, VHF and UHF transmitter equipment. Freescale's technical expertise delivers RF high power transistors for broadcast communication systems that combine performance, linearity, efficiency and ruggedness to meet your needs.

Freescale Competitive Advantages

  • Highest gain figures in the industry: up to 26 dB
  • Highest efficiency in the industry: up to 71% at P1dB
  • Low thermal resistance values reduce system cooling costs
  • Wide frequency range enables use in numerous applications
  • Cost-effective, over-molded plastic packaging options
  • Low thermal resistance air cavity packaging options
  • Backed by Freescale's secure volume manufacturing capability
  • Proven reliability, quality and consistency
  • Integrated ESD protection
  • World-class, global applications and design support
  • RoHS compliant
  • Proven high-voltage LDMOS process
 

Product Performance

 Link  HF/VHF/UHF - 50 Volt            Link  UHF - 32 Volt

RF Power Broadcast Portfolio
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HF/VHF/UHF Broadcast — 50 Volt Devices
Part Number Voltage
(V)		 Operating
Frequency
(MHz)		 Rated
Power
(W)		 Technology Package ΘJC
°C/W		 Typical
Gain
(dB)		 Typical
Efficiency
(%)		 Reference
Designs
(MHz)
MRF6V2010N/NB 50 10-450 10 CW VHV6 Over-Molded 3(2) 23.9 62 27, 130, 220, 450
MRF6V3090N/NB* 50 470-860 90 PEP VHV6 Over-Molded – 21/4.5 W
(OFDM)		 12/4.5 W
(OFDM)		 470-860
MRF6V2150N/NB 50 10-450 150 CW VHV6 Over-Molded 0.24(2) 25 68.3 27, 130, 220, 450
MRF6V2300N/NB 50 10-600 300 CW VHV6 Over-Molded 0.24(2) 25.5 68 27, 88-108 FM, 130, 170-230 Analog, 220, 450
MRF6V4300N/NB 50 10-600 300 CW VHV6 Over-Molded 0.24(2) 22 60 450
MRF6VP3450H/HS 50 470-860 450(1) VHV6 Air Cavity 0.23(3) 22.5/90 W
(OFDM)		 28/90 W
(OFDM)		 470-860
MRF6VP2600H 50 10-250
88-108		 600 CW VHV6 Air Cavity 0.20(4)
–		 25/125W (OFDM)
26*/600W (CW)		 28.5/125W (OFDM)
72*/600W (CW)		 88-108 FM, 170-230 Analog, 225, 352
MRF6VP11KH 50 10-150 1000(1) VHV6 Air Cavity 0.03(5) 26 71 15, 27, 82, 82 CW, 88-108 FM, 100 CW, 130
MRF6VP21KH 50 10-235 1000(1) VHV6 Air Cavity 0.03(6) 24 67.5 175-225 Analog, 225
*Preliminary
 

UHF Broadcast — 32 Volt Devices		  [Top]
Part Number Voltage
(V)		 Operating
Frequency
(MHz)		 Rated
Power
(W)		 Technology Package ΘJC
°C/W		 Typical
Gain
(dB)		 Typical
Efficiency
(%)		 Reference
Designs
(MHz)
MRFE6P3300H 32 470-860 300 CW HV6E LDMOS Air Cavity 0.23 20.4 44.8 470-860, 820-900
MRF377H 32 470-860 240 CW HV6 LDMOS Air Cavity 0.27 18.2 23 860, 470-860
MRFE6S9060N 28 470-960 60 CW HV6E LDMOS Over-Molded 0.77 21.1 33 865-895, 920-960
(1) Peak Power 
(2) Thermal resistance is determined under specified RF operating conditions: 220 MHz @ CW rated power. MRF6V4300N/NB: 450 MHz @ CW rated power
(3) Thermal resistance is determined under RF operating conditions: 860 MHz @ 90 W Avg.
(4) Thermal resistance is determined under specified RF operating conditions: 225 MHz @ 125 W Avg.
(5) Thermal resistance is determined under specified RF operating conditions: 130 MHz @ 1000 W peak, 100 µsec pulse width, 20% duty cycle
(6) Thermal resistance is determined under specified RF operating conditions: 225 MHz @ 1000 W peak, 100 µsec pulse width, 20% duty cycle

Analog and Digital TV — Output Transistor

Analog and Digital UHF TV: 450 Watt Output Transistor

The MRF6VP3450H and MRF6V3090N power transistors are ideal for UHF broadcast applications. The high output power capability and high gain enhance system-level efficiency by minimizing device count and combining losses. The exceptional efficiency of these RF power transistors can help reduce operating costs for TV broadcasters.


MRF6VP3450H — 320 W Avg. Lineup
RF Broadcast 320 Watt Avg Line-up
42 dB of Gain in Two Stages
  • Compact designs
  • 8 dB higher gain than current standard version
  • 50V supply, compatible with low-cost telecommunication DC supplies



Devices MRF6V3090N 4xMRF6VP3450H Totals
Typical Gain 21 dB 22.5 dB 42.5 dB
Pout 2.2 W 90 W 320 W Avg.
Drain Efficiency 8% 28% 24%
5 total parts, DVB-T OFDM signal, 10 PAR dB, 0.5 dB splitting and combining loss

Analog and Digital FM and VHF TV: 600 Watt Output Transistor

The MRF6VP2600H power transistor is ideal for FM/VHF broadcast applications. The high level of output power (600 W CW) and high gain (26 dB*) allows for very compact lineups, providing 50 dB of gain in two stages. The exceptional efficiency, combined with low thermal resistance, considerably reduces thermal constraints.


MRF6VP2600H — 1.1 kW Lineup – 108 MHz RF Broadcast 1.1 kW Line-up
50 dB of Gain in Two Stages
  • Smaller, lower cost driver
  • More compact design
  • Decreased part count
  • Better thermal, smaller heatsinks
  • 2:1 combining losses (0.2 dB)


Devices MRF6V2010N 2xMRF6VP2600H Totals
Typical Gain 24 dB 26 dB* 50 dB
Pout 2.7 W 600 W 1.1 kW CW
Drain Efficiency 30% 72%* 72%
*Preliminary
     

Design Support

 
MTTF Calculation Programs

Freescale's MTTF/FIT calculator software is designed to assist our customers in estimating the LDMOS device reliability in terms of electromigration wear-out failures. The program evaluates LDMOS device Median-Time-To-Failure (MTTF) using Black's Equations.


Reference Designs

Freescale Semiconductor is pleased to offer application-specific reference designs. These application-specific reference designs show some of the many possible uses of our high power RF transistors. They provide the customer's design engineers with a fast and accurate tool to both evaluate the performance envelope and fully characterize the devices under a variety of different operating conditions.

For additional information and/or availability contact your local Freescale Sales Office or Freescale Authorized Distributor.

HF/VHF/UHF Broadcast – 50 Volt Devices
Part Number Reference Designs
(MHz)
MRF6V2010N/NB 27, 130, 220, 450
MRF6V3090N/NB* 470-860
MRF6V2150N/NB 27, 130, 220, 450
MRF6V2300N/NB 27, 88-108 FM, 130, 170-230 Analog, 220, 450
MRF6V4300N/NB 450
MRF6VP3450H/HS 470-860
MRF6VP2600H 88-108 FM, 170-230 Analog, 225, 352
MRF6VP11KH 15, 27, 82, 82 CW, 88-108 FM, 100 CW, 130
MRF6VP21KH 175-225 Analog, 225
*Preliminary

UHF Broadcast — 32 Volt Devices
Part Number Reference Designs
(MHz)
MRFE6P3300H 470-860, 820-900
MRF377H 860, 470-860
MRFE6S9060N 865-895, 920-960


RF High Power Models

Freescale Semiconductor continues to populate its RF High Power Model Library with MET and Root models. All product models available in the RF High Power Model Library (Root and MET) include package, bond wire and internal matching network effects.

The current release of the MET model is available for Agilent EEsof ADS®  nonlinear circuit simulator


Application Notes
  • AN1907 — Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages
  • AN3263 — Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
  • AN3789 — Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Freescale Competitive Advantages


  • RF performance leadership
  • Package design
    • Freescale JEDEC-registered TO series is the leading over-molded plastic package series specifically designed for high power RF applications
    • Bolt down and solder reflow options
    • Multiple mounting configurations
    • 200°C TJ and above
  • Materials
    • RoHS compliant

RF Broadcast Chip Set
  • Manufacturing
    • Internal dedicated RF power plastic manufacturing line
    • Over 80 million RF power plastic packages shipped with no known package-related failures
    • Automated high volume assembly and test
    • Multiple manufacturing locations
  • Over-molded plastic
    • Solderable backmetal die attach = 20 percent better thermal results over epoxy
    • Package with a larger heatsink contact area for optimum thermal performance
  • Conventional ceramic packaging
    • Lower thermal resistance flange material
    • Higher on-package impedance matching
    • Higher power > 1 kW
    • Low Au solderable finish

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