Continuously Working to Perfect the Process
Freescale's process technologies drive innovation in the market, pushing the boundaries of higher-performing, lower-power devices in ever smaller packages. While technology scaling continues to be more and more expensive and technical challenging, the economics continue to yield every improving cost/function in end solutions. Freescale remains committed to an industry leading roadmap both in performance and breadth of technology offerings.
Freescale's high-performance CMOS process technology, known as HiPerMOS, is key for System-on-Chip (SoC) applications in the wireless, networking, transportation and home networking markets.
Freescale's development of memory technologies and devices focuses on meeting specific requirements such as nonvolatility, faster read/write times, lower power consumption and reduced system complexity as compared to designing the same memory device off-chip. Recent advances include the first commercially-available MRAM device.
Freescale has combined the high performance of gallium arsenide (GaAs) semiconductor compounds with the advantages of traditional metal oxide semiconductor field effect transistor (MOSFET) technology to create the industry's first commercially viable MOFSET device.
Freescale's invention of the ITFET device broke through traditional CMOS scaling barriers and vertical multi-gate challenges to deliver the industry's first combination of vertical and planar tin body structures within a single transistor.
Freescale develops differentiating RF and enabling technologies that connect the analog and digital worlds.
Freescale develops advanced sensing technology for detecting motion, tilt, liquid level, acceleration, pressure, smoke detection and more. Freescale is a leader in MEMS (Micro-Electro Mechanical Systems)-based sensors.
Freescale’s proprietary SMARTMOS™ technology is bringing long battery life to wireless devices with SMARTMOS 10W and providing next-generation power management for automotive and industrial applications with SMARTMOS 10T.
Offering the performance of SOI and the enhanced carrier mobility of strained silicon, sSOI transistors show performance increases greater than 30 percent over conventional technology and reductions of active power consumption of more than 40 percent.
