RF Power


Freescale serves numerous RF power amplifier markets including wireless infrastructure, broadcast, industrial, scientific and medical (ISM) and aerospace markets. RF power product offerings help our customers meet the increasing demands to develop solutions that continually increase performance and decrease cost utilizing state-of-the-art technologies. Airfast RF power solutions are designed to continue this tradition of increasing performance and decreasing cost.

RF Power


RF Power Parametric Search 

  • Transistors: Cellular - to 1000 MHz
    • A2T07D160W04S: 716-960 MHz, 30 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • A2T07H310-24S: 716-960 MHz, 47 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT09H310-03S: 920-960 MHz, 56 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT09S200W02N: 716-960 MHz, 56 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT09S282N: 720-960 MHz, 80 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S006N: 728-3600 MHz, 28.8 dBm Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S010N: 728-3600 MHz, 1.26 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFV09P350-04N: 720-960 MHz, 100 W Avg., 48 V Airfast RF Power LDMOS Transistors 
    • MD8IC970N: 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MRF5S9070NR1: 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRF5S9080N: 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF8P8300H: 790-820 MHz, 96 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P9040N: 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8P9210N: 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor 
    • MRF8P9300H: 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S7120N: 728-768 MHz, 32 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S7170N: 618-803 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S7235N: 728-768 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S8260H: 850-895 MHz, 70 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S9100H: 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF8S9102N: 865-960 MHz, 28 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9120N: 865-960 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9170N: 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9200N: 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9202N: 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9220H: 920-960 MHz, 65 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S9232N: 865-960 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9260H: 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF9030L: 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9030N: 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9045N: 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9060L: 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9060N: 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6P9220H: 865-900 MHz, 47 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFET 
    • MRFE6S8046N: 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9045NR1: 880 MHz, 10 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRFE6S9046N: 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9060NR1: 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRFE6S9125N: 800 MHz, 27 W Avg., 28 V, Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9135H: 940 MHz, 39 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9160H: 880 MHz, 35 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9205H: 880 MHz, 58 W Avg., 28 V, Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MW5IC970N: 800-900 MHz, 70 W, 28 V RF LDMOS Wideband 2-Stage Power Amplifiers 
    • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MW7IC008N: 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier 
  • Transistors: Cellular - to 2100 MHz
    • AFT18H357-24S: 1805-1995 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18HW355S: 1805-1880 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18P350-4S2L: 1805-1880 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18S230S: 1805-1880 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18S290-13S: 1805-1995 MHz 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT20P140-4WN: 1880-2025 MHz, 24 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT20S015N: 1805-2700 MHz 1.5 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • MD7P19130H: 1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF282ZR1: 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF5S19060N: 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S18060N: 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF6S19060N: 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S19100H: 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S19100N: 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S19140H: 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S20010N: 1600-2200 MHz, 10 W, 28 V, GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7P20040H: 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S15100H: 1510 MHz, 23 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S16150H: 1600-1660 MHz, 32 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF7S18170H: 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S19080H: 1930-1990 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S19100N: 1930-1990 MHz, 29 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S19120NR1: 1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF7S19170H: 1930-1990 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P18265H: 1805-1880 MHz, 72 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P20100H: 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P20140WH: 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P20160H: 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P20161H: 1880-1920 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8P20165WH: 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S18120H: 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF8S18210WHS: 1805 MHz - 1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S18260H: 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S19140H: 1930-1990 MHz, 34 W Avg., 28 V Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S19260H: 1930-1990 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
  • Transistors: Cellular - to 2200 MHz
    • AFT20P060-4N: 1805-2170 MHz 6.3 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT20S015N: 1805-2700 MHz 1.5 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT21H350W03S: 2110-2170 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT21S140W02S: 2110-2170 MHz, 32 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT21S220W02S: 2110-2170 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT21S230-12S: 2110-2170 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT21S230S: 2110-2170 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT21S232S: 2110-2170 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT21S240-12S: 2110-2170 MHz, 55 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S006N: 728-3600 MHz, 28.8 dBm Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S010N: 728-3600 MHz, 1.26 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • MRF5P21045NR1: 2110-2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA, Dual Path Lateral N-Channel RF Power MOSFET 
    • MRF6S20010N: 1600-2200 MHz, 10 W, 28 V, GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S21050L: 2110-2170 MHz, 11.5 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs 
    • MRF6S21100H: 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S21140H: 2110-2170 MHz, 30 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs 
    • MRF6S21190H: 2110-2170 MHz, 54 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21080H: 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21110H: 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21150H: 2110-2170 MHz, 44 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21170H: 2110-2170 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8HP21080H: 2110-2170 MHz, 16 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8HP21130H: 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S21100H: 2110-2170 MHz, 24 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S21120H: 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S21140H: 2110-2170 MHz, 34 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S21200H: 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
  • Transistors: Cellular - to 2700 MHz
    • A2T26H160-24S: 2496-2690 MHz, 28 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT20S015N: 1805-2700 MHz 1.5 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT23H200-4S2L: 2300-2400 MHz, 45 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT23S160W02S: 2300-2400 MHz, 45 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT23S170-13S: 2300-2400 MHz 45 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT26H160-4S4: 2496-2690 MHz, 32 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT26H200W03S: 2496-2690 MHz, 45 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT26H250-24S: 2496-2690 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT26H250W03S: 2496-2690 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT26HW050S: 2496-2690 MHz, 9 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT26P100-4WS: 2496-2690 MHz, 22 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S006N: 728-3600 MHz, 28.8 dBm Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S010N: 728-3600 MHz, 1.26 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • MRF6P27160HR6: 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF6S27015N: 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S27085H: 2600-2700 MHz, 20 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S27130H: 2500-2700 MHz, 23 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF7S38010H: 3400-3600 MHz, 2 W Avg., 30 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF7S38075H: 3400-3600 MHz, 12 W Avg., 30 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF8P23080H: 2300-2400 MHz, 16 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8P23160WH: 2300-2400 MHz, 30 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P26080H: 2500-2700 MHz, 14 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S23120H: 2300-2400 MHz, 28 W Avg., 28 V LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S26060H: 2620-2690 MHz, 15.5 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S26120H: 2620-2690 MHz, 28 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
  • Professional Mobile Radio - to 1000 MHz
    • AFT05MP075N: 136-520 MHz, 70 W, 12.5 V Broadband RF Power LDMOS Transistors 
    • AFT05MS004N: 136-941 MHz, 4 W, 7.5 V Wideband RF Power LDMOS Transistor 
    • AFT05MS006N: 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor 
    • AFT05MS031N: 136-520 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors 
    • AFT09MP055N: 764-941 MHz, 55 W, 12.5 V Broadband RF Power LDMOS Transistors 
    • AFT09MS007N: 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor 
    • AFT09MS015N: 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor 
    • AFT09MS031N: 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors 
    • MD8IC970N: 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MRF1511NT1: 175 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1513NT1: 520 MHz, 3 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1517NT1: 520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1518NT1: 520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF1535N: 520 MHz, 35 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF1550N: 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF1570N: 470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs 
  • ISM - to 600 MHz
    • MRF6V2010N: 10-450 MHz, 10 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF6V2150N: 10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs 
    • MRF6V2300N: 10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs 
    • MRF6V4300N: 10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs 
    • MRF6VP11KH: 1.8-150 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF6VP21KH: 10-235 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF6VP2600H: 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF6VP41KH: 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6VP100H: 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors 
    • MRFE6VP5150N: 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors 
    • MRFE6VP5300N: 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistors 
    • MRFE6VP5600H: 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6VP61K25H: 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors 
    • MRFE6VP6300H: 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6VS25L: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor 
    • MRFE6VS25N: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors 
  • HF/VHF/UHF Broadcast - to 860 MHz
    • MRF6V3090N: 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors 
    • MRF6VP3091N: 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors 
    • MRF6VP3450H: 860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6P3300H: 860 MHz, 300 W, 32 V Lateral N-Channel RF Power MOSFET 
    • MRFE6S9045NR1: 880 MHz, 10 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRFE6S9060NR1: 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRFE6VP100H: 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors 
    • MRFE6VP5150N: 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors 
    • MRFE6VP5300N: 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistors 
    • MRFE6VP8600H: 470-860 MHz, 600 W, 50 V LDMOS Broadband RF Power Transistors 
    • MRFE6VS25L: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor 
    • MRFE6VS25N: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors 
    • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
  • Commercial Aerospace L-Band -- 960-1500 MHz
    • MRF6V10010N: 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET 
    • MRF6V12250H: 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs 
    • MRF6V12500H: 960-1215 MHz, 500 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs 
    • MRF6V13250H: 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs 
    • MRF6V14300H: 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs 
    • MRF6VP121KH: 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6VP100H: 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors 
    • MRFE6VS25L: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor 
    • MRFE6VS25N: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors 
  • Commercial Aerospace S-Band -- 3100-3500 MHz
    • MRF7S35120HSR3: 3100-3500 MHz, 120 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET 
    • MRF8P29300H: 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs 
  • RF Heating
    • MHT1000H: 2450 MHz, 140 W CW, 28 V Industrial Heating, Rugged RF Power LDMOS Transistor 
    • MHT1001H: 2450 MHz, 190 W CW, 28 V Industrial Heating, Rugged RF Power LDMOS Transistor 
    • MHT1006N: 728-2700 MHz, 10 W CW, 28 V Industrial Heating, Rugged RF Power LDMOS Transistor 
    • MHT2000N: 2450 MHz, 25 W CW, 28 V Industrial Heating, Rugged RF LDMOS Integrated Power Amplifiers 
  • ISM Band - 2450 MHz
    • MRF6P24190HR6: 2450 MHz, 190 W, 28 V CW Lateral N-Channel RF Power MOSFET 
    • MRF6S24140H: 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs 
    • MW7IC2425N: 2450 MHz, 25 W CW, 28 V Lateral N-Channel RF Power MOSFETs 
  • RF Power GaN Transistors
  • RF Power LDMOS In-Package Doherty Transistors
    • In-Package Doherty: Cellular - to 1000 MHz
      • A2T07D160W04S: 716-960 MHz, 30 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • A2T07H310-24S: 716-960 MHz, 47 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • AFT09H310-03S: 920-960 MHz, 56 W Avg., 28 V Airfast RF Power LDMOS Transistors 
      • MDE6IC7120N: 728-768 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MDE6IC9120N: 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MRF8P9210N: 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor 
    • In-Package Doherty: Cellular - to 2100 MHz
      • AFT18H357-24S: 1805-1995 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • AFT18HW355S: 1805-1880 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • AFT18P350-4S2L: 1805-1880 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • AFT20P140-4WN: 1880-2025 MHz, 24 W Avg., 28 V Airfast RF Power LDMOS Transistors 
      • MD7IC18120N: 1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MD7IC2050N: 1880-2100 MHz, 10 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MRF7P20040H: 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
      • MRF8P18265H: 1805-1880 MHz, 72 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
      • MRF8P20100H: 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
      • MRF8P20140WH: 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
      • MRF8P20160H: 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
      • MRF8P20161H: 1880-1920 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
      • MRF8P20165WH: 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • In-Package Doherty: Cellular - to 2200 MHz
      • A2I22D050N: 2000-2200 MHz, 5.3 W Avg., 28 V Airfast RF LDMOS Wideband Integrated Power Amplifiers 
      • AFT21H350W03S: 2110-2170 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistors 
      • MD7IC21100N: 2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MD7IC2250N: 2110-2170 MHz, 5.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MD7IC2251N: 2110-2170 MHz, 12 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MRF8HP21080H: 2110-2170 MHz, 16 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
      • MRF8HP21130H: 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • In-Package Doherty: Cellular - to 2700 MHz
      • A2I25D012N: 2300-2690 MHz, 2.2 W Avg., 28 V Airfast RF LDMOS Wideband Integrated Power Amplifiers 
      • A2T26H160-24S: 2496-2690 MHz, 28 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • AFT23H200-4S2L: 2300-2400 MHz, 45 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • AFT26H160-4S4: 2496-2690 MHz, 32 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • AFT26H200W03S: 2496-2690 MHz, 45 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • AFT26H250-24S: 2496-2690 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • AFT26H250W03S: 2496-2690 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • AFT26HW050S: 2496-2690 MHz, 9 W Avg., 28 V Airfast RF Power LDMOS Transistors 
      • AFT26P100-4WS: 2496-2690 MHz, 22 W Avg., 28 V Airfast RF Power LDMOS Transistor 
      • MD7IC2755N: 2500-2700 MHz, 10 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
      • MRF8P23080H: 2300-2400 MHz, 16 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
      • MRF8P26080H: 2500-2700 MHz, 14 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
  • RF Power LDMOS Amplifier ICs
    • Amplifier ICs: Cellular - to 1000 MHz
      • MD8IC925N: 728-960 MHz, 2.5 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MD8IC970N: 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
      • MDE6IC7120N: 728-768 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MDE6IC9120N: 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MW4IC915N: 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MW5IC970N: 800-900 MHz, 70 W, 28 V RF LDMOS Wideband 2-Stage Power Amplifiers 
      • MW7IC915N: 728-960 MHz, 1.6 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier 
      • MW7IC930N: 728-768 MHz, 920-960 MHz, 3.2 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MWE6IC9080N: 865-960 MHz, 80 W CW, 28 V GSM, GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 
      • MWE6IC9100N: 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 
      • MWIC930N: 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 
    • Amplifier ICs: Cellular - to 2100 MHz
      • MD7IC18120N: 1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MD7IC2012N: 1805-2170 MHz, 1.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MD7IC2050N: 1880-2100 MHz, 10 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MW4IC2020N: 1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MW5IC2030N: 1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE, W-CDMA, PHS RF LDMOS Wideband Integrated Power Amplifiers 
      • MW6IC1940N: 1920-2000 MHz, 40 W, 28 V 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MW6IC2015N: 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MW7IC18100N: 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 
      • MW7IC2040N: 1930-1990 MHz, 1805-1880 MHz, 4 W Avg., 28 V, Single W-CDMA, GSM EDGE, GSM RF LDMOS Wideband Integrated Power Amplifiers 
    • Amplifier ICs: Cellular - to 2200 MHz
      • A2I22D050N: 2000-2200 MHz, 5.3 W Avg., 28 V Airfast RF LDMOS Wideband Integrated Power Amplifiers 
      • MD7IC2012N: 1805-2170 MHz, 1.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MD7IC21100N: 2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MD7IC2250N: 2110-2170 MHz, 5.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MD7IC2251N: 2110-2170 MHz, 12 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MW7IC2020N: 1805-2170 MHz, 2.4 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier 
      • MW7IC2220N: 2110-2170 MHz, 2 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
      • MW7IC2240N: 2110-2170 MHz, 4 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • Amplifier ICs: Cellular - to 2700 MHz
      • A2I25D012N: 2300-2690 MHz, 2.2 W Avg., 28 V Airfast RF LDMOS Wideband Integrated Power Amplifiers 
      • MD7IC2755N: 2500-2700 MHz, 10 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
      • MW7IC2725N: 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
      • MW7IC2750N: 2500-2700 MHz, 8 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
      • MW7IC3825N: 3400-3600 MHz, 5 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers 
  • RF Aerospace and Defense Transistors
    • MMRF1004N: 1600-2200 MHz, 10 W, 28 V, GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MMRF1005H: 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs 
    • MMRF1006H: 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MMRF1007H: 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MMRF1008H: 960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs 
    • MMRF1009H: 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs 
    • MMRF1011H: 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs 
    • MMRF1012N: 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET 
    • MMRF1013H: 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs 
    • MMRF1014N: 1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET 
    • MMRF1015N: 1-2000 MHz, 10 W, 28 V Class A/AB RF Power MOSFETs 
    • MMRF1016H: 2-500 MHz, 600 W, 50 V Broadband RF Power MOSFET 
    • MMRF1017N: 720-960 MHz, 80 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • MMRF1018N: 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors 
    • MMRF1019N: 1090 MHz, 10 W, 50 V Pulse RF Power LDMOS Transistor 
    • MMRF1020-04N: 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors 
    • MMRF1021N: 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor 
    • MMRF1304L: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor 
    • MMRF1304N: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors 
    • MMRF1305H: 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors 
    • MMRF1306H: 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors 
    • MMRF1308H: 1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs 
    • MMRF1310H: 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs 
    • MMRF1315N: 500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor 
    • MMRF1316N: 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor 
    • MMRF2004NB: 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifier 
    • MMRF2006N: 1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier 

RF Power Products by Application




Title

RF IMS2014 announcements


Featured Products

  • A2T07D160W04S – Symmetrical Doherty
    728 to 960 MHz, 30 W Avg., 21.5 dB gain, 47.9% efficiency
  • A2T07H310-24S – Asymmetrical Doherty
    720 to 960 MHz, 47 W Avg., 18.9 dB gain, 51.6% efficiency
  • A2I22D050N – Dual Path IC
    2000-2200 MHz, 5.3 W Avg., 31.5 dB gain, 18.3% PAE
  • A2I25D012N – Dual Path IC
    2300-2690 MHz, 2.2 W Avg., 33 dB gain, 19.8% PAE
  • A2T26H160-24S – Asymmetrical Doherty
    2496 to 2690 MHz, 28 W Avg., 15.7 dB gain, 46.5% efficiency

 

  • AFT05MS004N – Mobile Radio Transistor
    To 941 MHz, 7.5 V, 4 W CW, 20.8 dB gain, 74% efficiency
  • MRFE6VP5150N – 150 W Rugged Plastic for Industrial
    1.8-600 MHz, 50 V, 26.3 dB gain, 72% efficiency
  • MRFE6VP5300N – 300 W Rugged Plastic for Industrial
    1.8-600 MHz, 50 V, 25 dB gain, 70% efficiency

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