RF Cellular Infrastructure


Our extensive portfolio of RF high power products is unmatched in the industry with solutions available for a wide range of power levels and frequencies. Freescale products with cutting-edge RF technology and unrivaled performance are at work in wireless infrastructure markets around the globe. These products support global cellular standards such as LTE, W-CDMA/UMTS, GSM, EDGE, CDMA, and TD-SCDMA.

We are leading the way in RF high power with device offerings in the smallest possible footprints, extensive packaging options and world-class RF design expertise.

Our global RF team provides deep market expertise and end-to-end application support, including reference design hardware and product models.


RF Cellular Infrastructure


RF Cellular Infrastructure Parametric Search 

  • 450 - 1000 MHz
    • A2T07D160W04S: 716-960 MHz, 30 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • A2T07H310-24S: 716-960 MHz, 47 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT09H310-03S: 920-960 MHz, 56 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT09S200W02N: 716-960 MHz, 56 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT09S200W02S: 920-960 MHz, 56 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT09S282N: 720-960 MHz, 80 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S006N: 100-3600 MHz, 28.8 dBm Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S010N: 100-3600 MHz, 1.26 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFV09P350-04N: 720-960 MHz, 100 W Avg., 48 V Airfast RF Power LDMOS Transistors 
    • MD8IC925N: 728-960 MHz, 2.5 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MD8IC970N: 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MDE6IC9120N: 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MRF5S9070NR1: 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 
    • MRF5S9080N: 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF8P8300H: 790-820 MHz, 96 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P9040N: 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE RF Power LDMOS Transistors 
    • MRF8P9210N: 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor 
    • MRF8P9300H: 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S7120N: 728-768 MHz, 32 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S7170N: 618-803 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S7235N: 728-768 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9100H: 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF8S9102N: 865-960 MHz, 28 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9120N: 865-960 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9170N: 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9200N: 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9202N: 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9220H: 920-960 MHz, 65 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S9232N: 865-960 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8S9260H: 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF9030L: 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9030N: 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRF9060L: 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MRFE6S8046N: 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9045NR1: 865-960 MHz, 10 W Avg., 28 V Broadband RF Power LDMOS Transistor 
    • MRFE6S9046N: 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9060NR1: 470-960 MHz, 14 W Avg., 28 V, Broadband RF Power LDMOS Transistor 
    • MRFE6S9125N: 865-960 MHz, 27 W Avg., 28 V, N-CDMA, GSM EDGE RF Power LDMOS Transistors 
    • MRFE6S9135H: 940 MHz, 39 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9160H: 865-960 MHz, 35 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRFE6S9205H: 880 MHz, 58 W Avg., 28 V, Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MW4IC915N: 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MW7IC008N: 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier 
    • MW7IC915N: 728-960 MHz, 1.6 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifier 
    • MW7IC930N: 728-768 MHz, 920-960 MHz, 3.2 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MWE6IC9080N: 865-960 MHz, 80 W CW, 28 V GSM/EDGE RF LDMOS Wideband Integrated Amplifiers 
    • MWE6IC9100N: 865-960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Amplifiers 
    • MWIC930N: 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 
  • 1500 - 2200 MHz
    • A2G22S160-01S: 1800-2200 MHz, 32 W Avg., 48 V Airfast RF Power GaN Transistor 
    • A2I22D050N: 1800-2200 MHz, 5.3 W Avg., 28 V Airfast RF LDMOS Wideband Integrated Amplifiers 
    • A2T18H100-25S: 1805-1995 MHz, 18 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • A2T18H410-24S: 1805-1880 MHz, 71 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • A2T18S160W31S: 1805-1995 MHz, 32 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • A2T18S162W31S: 1805-1880 MHz, 32 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • A2T20H330W24S: 1880-2025 MHz, 58 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • A2T21H100-25S: 2110-2170 MHz, 18 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • A2T21H360-24S: 2110-2170 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • A2T21S160-12S: 2110-2170 MHz, 38 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • A2T21S260-12S: 2110-2170 MHz, 65 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18H356-24S: 1805-1995 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18H357-24N: 1805-1880 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18H357-24S: 1805-1995 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18HW355S: 1805-1880 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18P350-4S2L: 1805-1880 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18S230-12N: 1805-1880 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18S230S: 1805-1880 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT18S260W31S: 1805-1995 MHz 50 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT18S290-13S: 1805-1995 MHz 63 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT20P060-4N: 1805-2170 MHz 6.3 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT20P140-4WN: 1880-2025 MHz, 24 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT20S015N: 100-3600 MHz 1.5 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT21H350W03S: 2110-2170 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT21S140W02S: 2110-2170 MHz, 32 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT21S220W02S: 2110-2170 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT21S230-12S: 2110-2170 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT21S230S: 2110-2170 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT21S232S: 2110-2170 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT21S240-12S: 2110-2170 MHz, 55 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S006N: 100-3600 MHz, 28.8 dBm Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S010N: 100-3600 MHz, 1.26 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • MD7IC1812N: 1805-2170 MHz, 1.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers 
    • MD7IC2012N: 1805-2170 MHz, 1.3 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MD7IC2050N: 1880-2025 MHz, 10 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MD7IC2250N: 2110-2170 MHz, 5.3 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MD7IC2251N: 2110-2170 MHz, 12 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MD7P19130H: 1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF282ZR1: 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET 
    • MRF5P21045NR1: 2110-2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA, Dual Path Lateral N-Channel RF Power MOSFET 
    • MRF5S19060N: 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S18060N: 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF6S19060N: 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S19140H: 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S20010N: 1600-2200 MHz, 10 W, 28 V, GSM/EDGE, N-CDMA, W-CDMA RF Power LDMOS Transistors 
    • MRF7P20040H: 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S16150H: 1600-1660 MHz, 32 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF7S18170H: 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S19120NR1: 1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF7S19170H: 1930-1990 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21080H: 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21110H: 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S21150H: 2110-2170 MHz, 44 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8HP21080H: 2110-2170 MHz, 16 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8P20100H: 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P20140WH: 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P20160H: 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8P20161H: 1880-1920 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF8P20165WH: 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S18120H: 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 
    • MRF8S18210WHS: 1805-1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S18260H: 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF8S21100H: 2110-2170 MHz, 24 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors 
    • MRF8S21120H: 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MRF8S21200H: 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs 
    • MW6IC1940N: 1920-2000 MHz, 40 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 
    • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 
    • MW7IC2020N: 1805-2170 MHz, 2.4 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifier 
    • MW7IC2040N: 1930-1990 MHz, 1805-1880 MHz, 4 W Avg., 28 V, Single W-CDMA, GSM EDGE, GSM RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC2220N: 2110-2170 MHz, 2 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
    • MW7IC2240N: 2110-2170 MHz, 4 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers 
  • 2300 - 2690 MHz
    • A2G22S160-01S: 1800-2200 MHz, 32 W Avg., 48 V Airfast RF Power GaN Transistor 
    • A2I25D012N: 2100-2900 MHz, 2.2 W Avg., 28 V Airfast RF LDMOS Wideband Integrated Amplifiers 
    • A2I25D025N: 100-3600 MHz, 3.2 W Avg., 28 V Airfast RF LDMOS Wideband Integrated Amplifiers 
    • A2T23H300-24S: 2300-2400 MHz, 66 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • A2T26H160-24S: 2496-2690 MHz, 28 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT23H200-4S2L: 2300-2400 MHz, 45 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT23S160W02S: 2300-2400 MHz, 45 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT23S170-13S: 2300-2400 MHz 45 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT26H160-4S4: 2496-2690 MHz, 32 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT26H200W03S: 2496-2690 MHz, 45 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT26H250-24S: 2496-2690 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT26H250W03S: 2496-2690 MHz, 50 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT26HW050S: 2496-2690 MHz, 9 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT26P100-4WS: 2496-2690 MHz, 22 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • MRF8P23080H: 2300-2400 MHz, 16 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors 
    • MRF8P23160WH: 2300-2400 MHz, 30 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
  • 3400 - 3800 MHz
    • AFT20S015N: 100-3600 MHz 1.5 W Avg., 28 V Airfast RF Power LDMOS Transistors 
    • AFT27S006N: 100-3600 MHz, 28.8 dBm Avg., 28 V Airfast RF Power LDMOS Transistor 
    • AFT27S010N: 100-3600 MHz, 1.26 W Avg., 28 V Airfast RF Power LDMOS Transistor 
    • MD7IC2755N: 2500-2700 MHz, 10 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Amplifiers 
    • MRF6P27160HR6: 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET 
    • MRF6S27015N: 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF6S27085H: 2600-2700 MHz, 20 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs 
    • MRF7S27130H: 2500-2700 MHz, 23 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF7S38010H: 3400-3600 MHz, 2 W Avg., 30 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF7S38075H: 3400-3600 MHz, 12 W Avg., 30 V WiMAX Lateral N-Channel RF Power MOSFETs 
    • MRF8P26080H: 2500-2700 MHz, 14 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors 
    • MW7IC2725N: 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Amplifiers 
    • MW7IC3825N: 3400-3600 MHz, 5 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers